GRF5010 Guerrilla RF

GRF5010 Released 28.5 dBm Power-LNA Tuning Range: 0.05 6.0 GHz Product Description GRF5010 is a high linearity PA with ultra-low noise fig- ure (NF). The primary tune for this device covers 1.7 to 3.8 GHz and it achieves outstanding P1dB, IP3 and NF over the band. The device can be tuned to deliver out- standing performance over 0.1 GHz. to 6.0 GHz with fractional bandwidths >30%. With an 8.0 Volt supply, Features the device can deliver broadband OP1dB values greater than 28.0 dBm. Reference: 8V/95mA/2.5GHz In addition to use as a PA or linear driver, GRF5010 is well suited to demanding first, second or third stage Gain: 17.0 dB LNA applications requiring high linearity, ruggedness NF: 0.85 dB and low NF. OP1dB: 28.5 dBm Consult with the GRF applications engineering team for OIP3: 45.0 dBm custom tuning/evaluation board data and device s- parameters. Reference: 5V/60mA/2.5GHz Gain: 17.0 dB NF: 0.82 dB OP1dB: 24.5 dBm OIP3: 38.5 dBm Flexible Bias Voltage and Current Process: GaAs pHEMT Applications Multi-stage LNA Linear Driver Amplifier for High PAR Waveforms 3.0 x 3.0 mm QFN-16 Distributed Antenna Systems Microwave Backhaul TM TM Guerrilla RF Proprietary Information. Guerrilla RF and the composite logo of Guerrilla RF are trademarks of Guerrilla RF, Inc. 2014 Guerrilla RF, Inc. All rights reserved. Please contact Guerrilla RF at (+1) 336-510-7840 or sales guerrilla-rf.com Revision Date: 02/26/18 1 GRF5010 Released 28.5 dBm Power-LNA Tuning Range: 0.05 6.0 GHz Absolute Ratings: Parameter Symbol Min. Max. Unit Drain Voltage VDD 10.0 V Transient Average RF Input Power: (Load VSWR < 2:1 Du- P 22.0 dBm IN MAX ration: <1 hour) Average RF Output Power: (Load VSWR < 2:1 P 26.0 dBm OUT MAX V : > 8.0 volts Duration: Continuous) D Average RF Output Power: (Load VSWR < 2:1 P NA dBm OUT MAX V : <= 8.0 volts Duration: Continuous) D Operating Temperature (Package Heat Sink) T -40 105 C AMB Maximum Channel Temperature (MTTF > 10 6 Hours) TMAX 170 C Maximum Dissipated Power P 1.5 W DISS MAX Electrostatic Discharge: Charged Device Model: CDM 1000 V Human Body Model: HBM 250 V Storage: Storage Temperature TSTG -65 150 C Moisture Sensitivity Level MSL 1 -- Caution ESD Sensitive Device Exceeding Absolute Maximum Rating conditions may cause permanent damage to the device. Note: For package dimensions and manufacturing information, see the Guerrilla -RF.com website for the following document located on the GRF5010 landing page: Manufacturing NoteMN- 001 Product Tape and Reel, Solderability and Package Outline Specicatifi on. Link to manufacturing note TM TM Guerrilla RF Proprietary Information. Guerrilla RF and the composite logo of Guerrilla RF are trademarks of Guerrilla RF, Inc. 2014 Guerrilla RF, Inc. All rights reserved. Please contact Guerrilla RF at (+1) 336-510-7840 or sales guerrilla-rf.com Revision Date: 02/26/18 2