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X-On Electronics has gained recognition as a prominent supplier of GRF5115 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. GRF5115 RF Amplifier are a product manufactured by Guerrilla RF. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

GRF5115 Guerrilla RF

GRF5115 electronic component of Guerrilla RF
GRF5115 Guerrilla RF
GRF5115 RF Amplifier
GRF5115  Semiconductors

Images are for reference only
See Product Specifications
Part No. GRF5115
Manufacturer: Guerrilla RF
Category: RF Amplifier
Description: RF Amplifier .1-2.7GHz GaAs Gain 14.4dB
Datasheet: GRF5115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.5875 ea
Line Total: USD 6.59 
Availability - 6276
Ship by Wed. 12 Mar to Fri. 14 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6276
Ship by Wed. 12 Mar to Fri. 14 Mar
MOQ : 1
Multiples : 1
1 : USD 6.5875
10 : USD 4.268
25 : USD 3.971
100 : USD 3.597
250 : USD 3.41
500 : USD 3.102
1000 : USD 2.695
1500 : USD 2.662

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Test Frequency
Brand
Number Of Channels
Development Kit
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GRF5115 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GRF5115 and other electronic components in the RF Amplifier category and beyond.

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GRF5115 Released 33.0 dBm Power-LNA Tuning Range: 0.1 2.7 GHz Product Description GRF5115 is a high efficiency PA/Driver that delivers an OP1dB of 33 dBm with greater than 55% drain efficien- cy. It is tunable from 100 MHz up to 2.7 GHz with typi- cal fractional bandwidths of 5 to 10% The device can be biased with Vdd over a range from 2.7 to 5.0 volts and Iddq can be adjusted for optimal Features linearity and efficiency. Consult with the GRF applications engineering team for Reference: 5V/300mA/1.95GHz custom tuning/evaluation board data and device s- Gain: 14.8 dB parameters. OP1dB: 33.2 dBm Drain Efficiency: 58% OIP3: 43.0 dBm Eval Board NF: 1.3 dB Flexible Bias Voltage and Current Process: GaAs pHEMT Applications High Efficiency Power Amplifier Multi-stage LNA Linear Driver 3.0 x 3.0 mm QFN-16 TM TM Guerrilla RF Proprietary Information. Guerrilla RF and the composite logo of Guerrilla RF are trademarks of Guerrilla RF, Inc. 2014 Guerrilla RF, Inc. All rights reserved. Please contact Guerrilla RF at (+1) 336-510-7840 or sales guerrilla-rf.com Revision Date: 03/04/21 1 GRF5115 Released 33.0 dBm Power-LNA Tuning Range: 0.1 2.7 GHz Absolute Ratings: Parameter Symbol Min. Max. Unit Drain Voltage VDD 5.5 V Transient Average RF Input Power: (Load VSWR < 2:1 Du- P 23.0 dBm IN MAX ration: <1 hour) Operating Temperature (Package Heat Sink) TAMB -40 85 C Maximum Channel Temperature (MTTF > 10 6 Hours) TMAX 170 C Maximum Dissipated Power PDISS MAX 2.0 W Electrostatic Discharge: Charged Device Model: (TBD) CDM 1500 V Human Body Model: (TBD) HBM 250 V Storage: Storage Temperature TSTG -65 150 C Moisture Sensitivity Level MSL 1 -- Caution ESD Sensitive Device Exceeding Absolute Maximum Rating conditions may cause permanent damage to the device. Note: For manufacturing information, see the Guerrilla -RF.com website for the following docu- ment located on the GRF5115 landing page: Manufacturing NoteMN-001 Product Tape and Reel, Solderability and Package Outline Specicatifi on. Link to manufacturing note TM TM Guerrilla RF Proprietary Information. Guerrilla RF and the composite logo of Guerrilla RF are trademarks of Guerrilla RF, Inc. 2014 Guerrilla RF, Inc. All rights reserved. Please contact Guerrilla RF at (+1) 336-510-7840 or sales guerrilla-rf.com Revision Date: 03/04/21 2

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