Product Information

S5971

S5971 electronic component of Hamamatsu

Datasheet
PHOTODIODE, 900NM, 100MHZ, TO-18

Manufacturer: Hamamatsu
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 12.547 ea
Line Total: USD 12.55

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

S5971
Hamamatsu

1 : USD 12.2255
5 : USD 10.2506
10 : USD 9.1757
50 : USD 8.3184
100 : USD 7.938
250 : USD 7.5328

     
Manufacturer
Product Category
Peak Wavelength
Dark Current
Wavelength Of Peak Sensitivity
Angle Of Half Sensitivity
Diode Case Style
No Of Pins
Operating Temperature Min
Operating Temperature Max
Packaging
Msl
Svhc
Active Area
Bandwidth
External Diameter
External Length / Height
Lead Length
Lead Spacing
Operating Temperature Range
Reverse Voltage Vr Max
Sensitivity
Wavelength Typ
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Si PIN photodiode S5971 S5972 S5973 series High-speed photodiodes (S5973 series: 1 GHz) S5971, S5972 and S5973 series are high-speed Si PIN photodiodes designed for visible to near infrared light detection. These photodiodes provide wideband characteristics at a low bias, making them suitable for optical communications and other high-speed photometry. S5973 series includes a mini-lens type (S5973-01) that can be ef ciently coupled to an opti- cal ber and a violet sensitivity enhanced type (S5973-02) ideal for violet laser detection. Features Applications High-speed response Optical ber communications S5971 : 100 MHz (VR=10 V) High-speed photometry S5972 : 500 MHz (VR=10 V) Violet laser detection (S5973-02) S5973 series: 1 GHz (VR=3.3 V) Low price High sensitivity S5973-02: 0.3 A/W, QE=91 % (=410 nm) High reliability General ratings / Absolute maximum ratings Absolute maximum ratings Dimensional Effective Reverse Power Operating Storage Package Active area size outline/ active area Type No. voltage dissipation temperature temperature Window VR Max. P Topr Tstg 1 * material 2 (mm) (mm) (mm ) (V) (mW) (C) (C) S5971 I 1.2 1.1 S5972 /K I 0.8 0.5 S5973 TO-18 20 50 -40 to +100 -55 to +125 /L S5973-01 I 0.4 0.12 S5973-02 /K Electrical and optical characteristics Photo sensitivity Short Temp. Peak Spectral Terminal S circuit Dark coef cient Cut-off NEP response sensitivity capacitance V =10 V (A/W) current current of frequency R range Ct wavelength ID ID fc O =O p Isc Type No. O f=1 MHz O p TCID 100 lx 660 780 830 O p nm nm nm Typ. Max. 1/2 ( A) (nm) (nm) (nA) (nA) (times/C) (GHz) (pF) (W/Hz ) 3 3 3 -15 S5971 320 to 1060 900 0.64 0.6 1.0 0.07 * 1 * 0.1 * 7.4 10 3 0.55 3 * 3 3 3 -15 S5972 800 0.57 0.55 0.42 0.01 * 0.5 * 0.5 * 3.1 10 0.44 S5973 0.09 1.15 -15 4 320 to 1000 0.52 0.51 0.47 1.1 10 * 4 4 4 4 S5973-01 760 0.42 0.001 * 0.1 * 1 * 1.6 * 2 -15 2, 4 S5973-02 0.45 0.3 * 0.42 0.37 0.07 1.9 10 * * *1: Window material K: borosilicate glass, L: lens type borosilicate glass *2: =410 nm O *3: V =10 V R *4: V =3.3 V R 1 www.hamamatsu.comSi PIN photodiode S5971, S5972, S5973 series Spectral response Photo sensitivity temperature characteristics (Typ.) (Typ. Ta=25 C) +1.5 0.7 S5971 S5971 0.6 +1.0 0.5 S5973-02 S5972 0.4 S5973 SERIES S5972 +0.5 0.3 S5973/-01 0.2 0 0.1 0 -0.5 300 400 500 600 700 800 900 1000 1100 200 400 600 800 1000 WAVELENGTH (nm) WAVELENGTH (nm) KPINB0157EB KPINB0158EA Frequency response Cut-off frequency vs. reverse voltage (Typ. Ta=25 C, =830 nm, RL=50 ) (Typ. Ta=25 C, =830 nm, RL=50 ) +10 10 GHz S5973 SERIES S5973 SERIES (VR=3.3 V) 0 1 GHz S5972 -3 S5971 (VR=10 V) -10 100 MHz S5971 S5972 (VR=10 V) -20 10 MHz 1 MHz 10 MHz 100 MHz 1 GHz 10 GHz 1 10 100 REVERSE VOLTAGE (V) FREQUENCY KPINB0159EB KPINB0160EB 2 PHOTO SENSITIVITY (A/W) RELATIVE OUTPUT (dB) TEMPERATURE COEFFICIENT (%/C) CUT-OFF FREQUENCY

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

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