X-On Electronics has gained recognition as a prominent supplier of HFE4081-321 Laser Diodes across the USA, India, Europe, Australia, and various other global locations. HFE4081-321 Laser Diodes are a product manufactured by Honeywell. We provide cost-effective solutions for Laser Diodes, ensuring timely deliveries around the world.

HFE4081-321 Honeywell

HFE4081-321 electronic component of Honeywell
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See Product Specifications
Part No.HFE4081-321
Manufacturer: Honeywell
Category: Laser Diodes
Description: Laser Diode VCSELs-LD 860nm 1.2mW 3-Pin TO-46
Datasheet: HFE4081-321 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 221.7236 ea
Line Total: USD 221.72

Availability - 3
Ship by Tue. 06 Aug to Mon. 12 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3
Ship by Tue. 06 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 228.7625

   
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We are delighted to provide the HFE4081-321 from our Laser Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HFE4081-321 and other electronic components in the Laser Diodes category and beyond.

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Fiber Optic LAN Components HFE408x-321 High Speed VCSEL 1.25Gbps FEATURES Designed for drive currents between 5 and 15 mA Optimized for low dependence of electrical properties over temperature High speed 1 GHz Two different laser/ photodiode polarities Attenuating coating Packaged with a photodetector The HFE408x-321 is a high-performance 850 nm VCSEL (Vertical Cavity Surface-Emitting Laser) packaged for high-speed data communications. This product combines all the performance advantages of the VCSEL with a custom designed power monitor diode. The power monitor diode can be used with appropriate feedback control circuitry to set a maximum power level for each VCSEL. In addition, built-in power attenuation reduces the effective slope efficiency. These combined features simplify design for high data rate LASER RADIATION communication and eye safety. AVOID EXPOSURE TO BEAM CLASS 3B LASER PRODUCT The HFE408x-321 is a high radiance VCSEL designed to convert electrical current into optical power that can be used in fiber optic communications and other applications. As the current varies above threshold, the light intensity increases proportionally. The HFE408x-321 is designed to be used with inexpensive silicon or gallium arsenide detectors, but excellent performance can also be achieved with some indium gallium arsenide detectors. The low drive current requirement makes direct drive from PECL (Positive Emitter Coupled Logic) or EML (Emitter Coupled Logic) gates possible and eases driver design. The HFE408x-321 is designed to interface with 50/125 and 62.5/125 m multimode fiber. They product circularly symmetric, non-astigmatic, narrow divergence beams that, with appropriate lensing, fiber couple all of the emitter power. Honeywell www.honeywell.com/sensing/VCSELHFE408x-321 Fiber Optic LAN Components High Speed VCSEL 1.25Gbps ABSOLUTE MAXIMUM RATINGS NOTICE Parameter Rating Stresses greater than those listed under Storage Temperature -40 to +125C Absolute Maximum Ratings may cause Operating Temperature 0 to +70C permanent damage to the device. This is a stress rating only and functional Lead Solder Temperature 260C, 10 sec. operation of the device at these or any Continuous Optical Output Power (Any Current) 5 mW other conditions above those indicated in 5 V Laser Diode Reverse Voltage (I =10 A) R the operations section for extended periods of time may affect reliability. Laser Continuous Forward Current, Heat-Sinked 15 mA PIN Photodiode Forward Current 10 mA o ELECTRO-OPTICAL CHARACTERISTICS (T =25 C unless otherwise stated) A VCSEL Parameters Test Condition Symbol Min. Typ. Max. Units Notes Peak Operating Current Adjustable to establish I 12 20 mA 1 peak operating power Optical Power Output I =12mA Po 0.3 0.6 1.2 mW 1 F Threshold Current I 1.5 3.5 6 mA TH o o Threshold Current T = 0 C to 70 C -1.5 1.5 mA 2 I A TH Temperature Variation Slope Efficiency Po =0.5mW 0.04 0.1 0.16 mW/mA 3 o o o Slope Efficiency T = 0 C to 70 C -0.5 %/ C / T A Temperature variation Peak Wavelength I =12mA 830 850 860 nm F P o I =12mA 0.06 nm/ C Temperature Variation T P F P/ Spectral Bandwidth, RMS I =12mA 0.85 nm F Laser Forward Voltage I =12 mA V 1.6 1.8 2.2 V F F Laser Reverse Voltage 510 V I =10 A BVR LD R Rise and Fall Times Prebias Above t 150 300 ps 4 r Threshold, 20%-80% t 200 300 f Relative Intensity Noise 1 GHz BW, I =12mA RIN -128 -122 dB/Hz F Series Resistance I =12 mA R 18 25 40 Ohms F S Beam Divergence I =12 mA 5 15 20 Degrees 5 F Photodiode Parameters Test Condition Symbol Min. Typ. Max. Units Notes Monitor Current Po =0.5mW I 0.075 0.250 mA PD o Monitor current Po =0.5mW 0.2 %/ C I / T PD Temperature Variation Dark Current Po =0mW, V =3V I 20 nA R D PD Reverse Voltage Po =0mW, I =10 A BVR 30 115 V 6 PD R PD Capacitance V =0V, Freq=1MHz C75 100 pF R V =3V, Freq=1MHz 40 55 R 2 Honeywell For application help: call 1-800-537-6945 www.honeywell.com/sensing/VCSEL

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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