SDP8406-001 Honeywell

SDP8406 Silicon Phototransistor FEATURES Side-looking plastic package 50 (nominal) acceptance angle Wide sensitivity ranges Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SDP8406 is an NPN silicon phototransistor molded Tolerance 3 plc decimals 0.005(0.12) in a side-looking clear plastic package. The chip is 2 plc decimals 0.020(0.51) positioned to accept radiation through a plastic lens from the side of the package. DIM 017.ds4 Honeywell reserves the right to make changes in order to improve design and 120 h supply the best products possible.SDP8406 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Power Dissipation 100 mW Operating Temperature Range -40C to 85C Storage Temperature Range -40C to 85C Soldering Temperature (5 sec) 240C Notes 1. Derate linearly from 25C free-air temperature at the rate of 0.78 mW/C. Honeywell reserves the right to make changes in order to improve design and 121 h supply the best products possible.