SDP8436-001 Honeywell

SDP8436 Silicon Phototransistor FEATURES Side-looking plastic package 18 (nominal) acceptance angle Enhanced coupling distance Internal visible light rejection filter Low profile for design flexibility Wide sensitivity ranges Mechanically matched to SEP8736 infrared emitting diode INFRA-82.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SDP8436 is an NPN silicon phototransistor molded Tolerance 3 plc decimals 0.005(0.12) in a black plastic package which combines the mounting 2 plc decimals 0.020(0.51) advantages of a side-looking package with the narrow acceptance angle and high optical gain of a T1 package. The SDP8436 is designed for those applications which require longer coupling distances than standard sidelooking devices can provide, such as touch screens. The device is also well suited to applications in which adjacent channel crosstalk could be a problem. The package is highly transmissive to the IR source energy while it provides effective shielding against visible ambient light. DIM 019.ds4 Honeywell reserves the right to make changes in order to improve design and 128 h supply the best products possible.SDP8436 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Power Dissipation 100 mW Operating Temperature Range -40C to 85C Storage Temperature Range -40C to 85C Soldering Temperature (5 sec) 240C Notes 1. Derate linearly from 25C free-air temperature at the rate of 0.78 mW/C. Honeywell reserves the right to make changes in order to improve design and 129 h supply the best products possible.