SE1450-003 Honeywell

SE1450 GaAs Infrared Emitting Diode FEATURES Compact, metal can coaxial package 24 (nominal) beam angle 935 nm wavelength Wide operating temperature range (55Cto+125C) Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington INFRA-63.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SE1450 is a gallium arsenide infrared emitting Tolerance 3 plc decimals 0.005(0.12) diode mounted in a glass lensed, metal can coaxial 2 plc decimals 0.020(0.51) package. The package may have a tab or second lead welded to the can as an optional feature SE1450-XXX (SE1450XXXL). Both leads are flexible and may be .091(2.26) formed as required to fit various mounting configurations. CATHODE (CASE) ANODE .020(0.51) DIA .062(1.57) DIA .079(2.01) DIA .076(1.93) .010(0.25) .095(2.41) DIA .122(3.10) .106(2.69) 1.000(25.40) MIN DIM 001a.ds4 SE1450-XXXL .091(2.26) .020 (0.51) DIA CATHODE ~ ANODE ~ ~ ~ .020 (0.51) DIA .062(1.57) DIA .079(2.01) DIA .076(1.93) .010(0.25) .095(2.41) DIA .122(3.10) .106(2.69) 1.000(25.40) TYPICAL MIN DIM 001b.ds4 Honeywell reserves the right to make changes in order to improve design and 8 h supply the best products possible. ~ ~SE1450 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 75 mW Operating Temperature Range -55C to 125C Storage Temperature Range -65C to 150C Soldering Temperature (10 sec) 260C Notes 1. Derate linearly from 25C free-air temperature at the rate of 0.71mW/C. Honeywell reserves the right to make changes in order to improve design and 9 h supply the best products possible.