SE1470-003L Honeywell

SE1470 AlGaAs Infrared Emitting Diode FEATURES Compact metal can coaxial package 24 (nominal) beam angle 880 nm wavelength Higher output power than GaAs at equivalent drive currents Wide operating temperature range (55Cto+125C) Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington INFRA-63.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SE1470 is a high intensity aluminum gallium Tolerance 3 plc decimals 0.005(0.12) arsenide infrared emitting diode mounted in a glass 2 plc decimals 0.020(0.51) lensed metal can coaxial package. The package may have a tab or second lead welded to the can as an SE1470-XXX optional feature (SE1470-XXXL). Both leads are flexible .091(2.26) and may be formed as required to fit various mounting configurations. These devices typically exhibit 70% CATHODE (CASE) greater power intensity than gallium arsenide devices at ANODE the same forward current020(0.51) DIA .062(1.57) DIA .079(2.01) DIA .076(1.93) .010(0.25) .095(2.41) DIA .122(3.10) .106(2.69) 1.000(25.40) MIN DIM 001a.ds4 SE1470-XXXL .091(2.26) .020 (0.51) DIA CATHODE ~ ANODE ~ ~ ~ .020 (0.51) DIA .062(1.57) DIA .079(2.01) DIA .076(1.93) .010(0.25) .095(2.41) DIA .122(3.10) .106(2.69) 1.000(25.40) TYPICAL MIN DIM 001b.ds4 Honeywell reserves the right to make changes in order to improve design and 12 h supply the best products possible. ~ ~SE1470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 75 mW Operating Temperature Range -55C to 125C Storage Temperature Range -65C to 150C Soldering Temperature (10 sec) 260C Notes 1. Derate linearly from 25C free-air temperature at the rate of 0.71mW/C. Honeywell reserves the right to make changes in order to improve design and 13 h supply the best products possible.