SE2470-001 Honeywell

SE2470 AlGaAs Infrared Emitting Diode FEATURES Miniature, hermetically sealed, pill style, metal can package 18 (nominal) beam angle Wide operating temperature range (55Cto+125C) Higher power output than GaAs at equivalent drive currents Ideal for direct mounting to printed circuit boards 880 nm wavelength Mechanically and spectrally matched to SD2420 photodiode, SD2440 phototransistor and SD2410 photodarlington INFRA--1.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SE2470 is a high intensity aluminum gallium Tolerance 3 plc decimals 0.005(0.12) arsenide infrared emitting diode mounted in a 2 plc decimals 0.020(0.51) hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current. DIM 002.ds4 Honeywell reserves the right to make changes in order to improve design and 20 h supply the best products possible.SE2470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Continuous Forward Current 75 mA Power Dissipation 125 mW Operating Temperature Range -55C to 125C Storage Temperature Range -65C to 150C Soldering Temperature (10 sec) 260C Notes 1. Derate linearly from 25C free-air temperature at the rate of 1.19 mW/C,when soldered into a double sided printed circuit board. Honeywell reserves the right to make changes in order to improve design and 21 h supply the best products possible.