SE5470-001 Honeywell

SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES TO-46 metal can package Choice of flat window or lensed package 90 or 20 (nominal) beam angle option 880 nm wavelength Higher output power than GaAs at equivalent drive currents Wide operating temperature range (55Cto+125C) Ideal for high pulsed current applications Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger INFRA-83.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SE3470/5470 series consists of aluminum gallium Tolerance 3 plc decimals 0.005(0.12) arsenide infrared emitting diode mounted in a TO-46 2 plc decimals 0.020(0.51) metal can package. The SE3470 series has flat window cans providing a wide beam angle, while the SE5470 SE3470 series has glass lensed cans providing a narrow beam 45 .188 (4.77) angle. These devices typically exhibit 70% greater DIA178 (4.52) .046(1.17) power output than gallium arsenide devices at the same .500 .036(.91) .219 (5.56) DIA. forward current. The TO-46 packages offer high power (12.70) .208 (5.28) MIN100(2.54)DIA dissipation capability and are ideally suited for operation 1 NOM in hostile environments. 2 .048(1.22) .028(.71) .160 (4.06) DIA015 .137 (3.48) (0.36) .018 DIA. (.460) .153 (3.89) LEADS: .140 (3.56) 1. CATHODE (TAB) 2. ANODE (CASE) DIM 005a.ds4 SE5470 45 .188 (4.77) DIA178 (4.52) .046(1.17) .500 .036(.91) .219 (5.56) DIA. (12.70) .208 (5.28) MIN100(2.54)DIA 1 NOM 2 .048(1.22) .015 .160 (4.06) .028(.71) DIA. (0.36) .137 (3.48) .018 .200 DIA. (.460) 5.08 .247 (6.27) LEADS: .224 (5.89) 1. CATHODE (TAB) 2. ANODE (CASE) DIM 005b.ds4 Honeywell reserves the right to make changes in order to improve design and 32 h supply the best products possible.SE3470/5470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Continuous Forward Current 100 mA Peak Forward Current 3 A (1s pulse width, 300 pps) Power Dissipation 150 mW Operating Temperature Range -55C to 125C Storage Temperature Range -65C to 150C Soldering Temperature (10 sec) 260C Notes 1. Derate linearly from 25C free-air temperature at the rate of 1.43 mW/C. Honeywell reserves the right to make changes in order to improve design and 33 h supply the best products possible.