X-On Electronics has gained recognition as a prominent supplier of SE5470-002 Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. SE5470-002 Infrared Emitters - High Power are a product manufactured by Honeywell. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

SE5470-002 Honeywell

SE5470-002 electronic component of Honeywell
SE5470-002 Honeywell
SE5470-002 Infrared Emitters - High Power
SE5470-002  Optoelectronics

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See Product Specifications
Part No. SE5470-002
Manufacturer: Honeywell
Category: Infrared Emitters - High Power
Description: Infrared Emitters - High Power 20deg,T0-46 DomeLens 0.7 us Rise and Fall
Datasheet: SE5470-002 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 7.7619 ea
Line Total: USD 77.62 
Availability - 228
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
228
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 10
Multiples : 1
10 : USD 7.7619
50 : USD 7.6289
100 : USD 7.1936
1000 : USD 6.9035
5000 : USD 6.7584

2983
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 10
Multiples : 1
10 : USD 8.349
50 : USD 7.8828
100 : USD 7.4355
1000 : USD 7.1332

223
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 10
Multiples : 10
10 : USD 10.4941
50 : USD 9.9175
100 : USD 9.3517
1000 : USD 8.9745
5000 : USD 8.7859

   
Manufacturer
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Beam Angle
If - Forward Current
Vf - Forward Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SE5470-002 from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SE5470-002 and other electronic components in the Infrared Emitters - High Power category and beyond.

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SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES TO-46 metal can package Choice of flat window or lensed package 90 or 20 (nominal) beam angle option 880 nm wavelength Higher output power than GaAs at equivalent drive currents Wide operating temperature range (55Cto+125C) Ideal for high pulsed current applications Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger INFRA-83.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SE3470/5470 series consists of aluminum gallium Tolerance 3 plc decimals 0.005(0.12) arsenide infrared emitting diode mounted in a TO-46 2 plc decimals 0.020(0.51) metal can package. The SE3470 series has flat window cans providing a wide beam angle, while the SE5470 SE3470 series has glass lensed cans providing a narrow beam 45 .188 (4.77) angle. These devices typically exhibit 70% greater DIA178 (4.52) .046(1.17) power output than gallium arsenide devices at the same .500 .036(.91) .219 (5.56) DIA. forward current. The TO-46 packages offer high power (12.70) .208 (5.28) MIN100(2.54)DIA dissipation capability and are ideally suited for operation 1 NOM in hostile environments. 2 .048(1.22) .028(.71) .160 (4.06) DIA015 .137 (3.48) (0.36) .018 DIA. (.460) .153 (3.89) LEADS: .140 (3.56) 1. CATHODE (TAB) 2. ANODE (CASE) DIM 005a.ds4 SE5470 45 .188 (4.77) DIA178 (4.52) .046(1.17) .500 .036(.91) .219 (5.56) DIA. (12.70) .208 (5.28) MIN100(2.54)DIA 1 NOM 2 .048(1.22) .015 .160 (4.06) .028(.71) DIA. (0.36) .137 (3.48) .018 .200 DIA. (.460) 5.08 .247 (6.27) LEADS: .224 (5.89) 1. CATHODE (TAB) 2. ANODE (CASE) DIM 005b.ds4 Honeywell reserves the right to make changes in order to improve design and 32 h supply the best products possible.SE3470/5470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Continuous Forward Current 100 mA Peak Forward Current 3 A (1s pulse width, 300 pps) Power Dissipation 150 mW Operating Temperature Range -55C to 125C Storage Temperature Range -65C to 150C Soldering Temperature (10 sec) 260C Notes 1. Derate linearly from 25C free-air temperature at the rate of 1.43 mW/C. Honeywell reserves the right to make changes in order to improve design and 33 h supply the best products possible.

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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Honeywell Microelectronics & Precision Sensors
HONEYWELL S&C
HONEYWELL S&C / CLAROSTAT
HONEYWELL S&C / HOBBS
HONEYWELL SAFETY
Honeywell Sensing and Control
Honeywell Sensing and Control EMEA
Honeywell Sensing and Productivity Solutions
Honeywell Sensing and Productivity Solutions T&M
Honeywell SSEC
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