Product Information

SEP8505-001

SEP8505-001 electronic component of Honeywell

Datasheet
Infrared Emitters GaAs Infrared Emitting Diode
Manufacturer: Honeywell
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 2.8889 ea
Line Total: USD 28.89

805 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 10  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
805 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 10
Multiples : 1

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SEP8505-001
Honeywell

10 : USD 2.8
100 : USD 2.275
300 : USD 2.1375
500 : USD 2.0625
1000 : USD 1.875
2500 : USD 1.825
5000 : USD 1.7625
7500 : USD 1.7375

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
If - Forward Current
Vf - Forward Voltage
Power Rating
Minimum Operating Temperature
Maximum Operating Temperature
Package / Case
Illumination Color
Brand
Forward Voltage
Lens Shape
Viewing Angle
Maximum Forward Current
Height
Width
Cnhts
Hts Code
Lens Dimensions
Mxhts
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Additional Infomation About Product

SEP8505 GaAs Infrared Emitting Diode FEATURES T-1 package 15 (nominal) beam angle 935 nm wavelength Consistent on-axis optical properties Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington INFRA-55.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SEP8505 is a gallium arsenide infrared emitting Tolerance 3 plc decimals 0.005(0.12) diode transfer molded in a T-1 red plastic package. 2 plc decimals 0.020(0.51) Transfer molding of this device assures superior optical centerline performance compared to other molding .200 (5.08) processes. Lead lengths are staggered to provide a .180 (4.57) .03(.76) .020 SQ. LEAD TYP simple method of polarity identification. (.51) .05(1.27) .050 CATHODE (1.27) ANODE .125 (3.18) DIA155 .115 (2.92) DIA. (3.94) .500 MIN. (12.7) .250 (6.35) MAX. DIM 101.ds4 Honeywell reserves the right to make changes in order to improve design and 36 h supply the best products possible.SEP8505 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 70 mW Operating Temperature Range -40C to 85C Storage Temperature Range -40C to 85C Soldering Temperature (5 sec) 240C Notes 1. Derate linearly from 25C free-air temperature at the rate of 0.18 mW/C. Honeywell reserves the right to make changes in order to improve design and 37 h supply the best products possible.

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

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