SEP8505-001 Honeywell

SEP8505 GaAs Infrared Emitting Diode FEATURES T-1 package 15 (nominal) beam angle 935 nm wavelength Consistent on-axis optical properties Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington INFRA-55.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SEP8505 is a gallium arsenide infrared emitting Tolerance 3 plc decimals 0.005(0.12) diode transfer molded in a T-1 red plastic package. 2 plc decimals 0.020(0.51) Transfer molding of this device assures superior optical centerline performance compared to other molding .200 (5.08) processes. Lead lengths are staggered to provide a .180 (4.57) .03(.76) .020 SQ. LEAD TYP simple method of polarity identification. (.51) .05(1.27) .050 CATHODE (1.27) ANODE .125 (3.18) DIA155 .115 (2.92) DIA. (3.94) .500 MIN. (12.7) .250 (6.35) MAX. DIM 101.ds4 Honeywell reserves the right to make changes in order to improve design and 36 h supply the best products possible.SEP8505 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 70 mW Operating Temperature Range -40C to 85C Storage Temperature Range -40C to 85C Soldering Temperature (5 sec) 240C Notes 1. Derate linearly from 25C free-air temperature at the rate of 0.18 mW/C. Honeywell reserves the right to make changes in order to improve design and 37 h supply the best products possible.