X-On Electronics has gained recognition as a prominent supplier of HIGLD60R190D1 GaN FETs across the USA, India, Europe, Australia, and various other global locations. HIGLD60R190D1 GaN FETs are a product manufactured by HXY MOS. We provide cost-effective solutions for GaN FETs, ensuring timely deliveries around the world.

HIGLD60R190D1 HXY MOS

HIGLD60R190D1 electronic component of HXY MOS
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See Product Specifications
Part No. HIGLD60R190D1
Manufacturer: HXY MOS
Category: GaN FETs
Description: DFN-8(8x8) GaN Transistors(GaN HEMT) ROHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.9962 ea
Line Total: USD 9 
Availability - 190
Ship by Fri. 09 May to Wed. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
190
Ship by Fri. 09 May to Wed. 14 May
MOQ : 1
Multiples : 1
1 : USD 8.9962
10 : USD 5.2839
30 : USD 4.8018
100 : USD 4.3982

   
Manufacturer
Product Category
Package
Rohs
Total Gate Charge
Drain Source On-State Resistance
Drain Source Breakdown Voltage
Drain Source On-State Resistance8v
Technical Route
Transistor Type
Power Dissipation
Continuous Drain Current
Gate Threshold Voltage
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We are delighted to provide the HIGLD60R190D1 from our GaN FETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HIGLD60R190D1 and other electronic components in the GaN FETs category and beyond.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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