X-On Electronics has gained recognition as a prominent supplier of IGLT65R025D2AUMA1 GaN FETs across the USA, India, Europe, Australia, and various other global locations. IGLT65R025D2AUMA1 GaN FETs are a product manufactured by Infineon. We provide cost-effective solutions for GaN FETs, ensuring timely deliveries around the world.

IGLT65R025D2AUMA1 Infineon

Name: IGLT65R025D2AUMA1
Brand: Infineon
SKU: IGLT65R025D2AUMA1_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IGLT65R025D2AUMA1 electronic component of Infineon

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Part No.	IGLT65R025D2AUMA1
Manufacturer:	Infineon
Category:	GaN FETs
Description:	GaN FETs
Datasheet:	IGLT65R025D2AUMA1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 16.176 ea
Line Total: USD 16.18

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

IGLT65R025D2AUMA1 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 01 May to Mon. 05 May MOQ : 1 Multiples : 1	1 : USD 16.176 10 : USD 12.386 25 : USD 11.704 50 : USD 11.209 100 : USD 10.934 250 : USD 10.417 500 : USD 10.043 1000 : USD 10.021 1800 : USD 9.13

We are delighted to provide the IGLT65R025D2AUMA1 from our GaN FETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGLT65R025D2AUMA1 and other electronic components in the GaN FETs category and beyond.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category GaN FETs GaN FETs
Mounting Style SMD/SMT SMD/SMT
Transistor Polarity N - Channel N - Channel
Number of Channels 1 Channel 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V 650 V
Id - Continuous Drain Current 67 A 67 A
Rds On - Drain-Source Resistance 30 mOhms 30 mOhms
Vgs - Gate-Source Voltage - 10 V - 10 V
Vgs th - Gate-Source Threshold Voltage 1.6 V 1.6 V
Qg - Gate Charge 16 nC 16 nC
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 219 W 219 W
Channel Mode Enhancement Enhancement
Package / Case PG - HDSOP - 16 PG - HDSOP - 16