X-On Electronics has gained recognition as a prominent supplier of IGLT65R045D2ATMA1 GaN FETs across the USA, India, Europe, Australia, and various other global locations. IGLT65R045D2ATMA1 GaN FETs are a product manufactured by Infineon. We provide cost-effective solutions for GaN FETs, ensuring timely deliveries around the world.

IGLT65R045D2ATMA1 Infineon

Name: IGLT65R045D2ATMA1
Brand: Infineon
SKU: IGLT65R045D2ATMA1_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IGLT65R045D2ATMA1 electronic component of Infineon

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Part No.	IGLT65R045D2ATMA1
Manufacturer:	Infineon
Category:	GaN FETs
Description:	GaN FETs
Datasheet:	IGLT65R045D2ATMA1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 11.22 ea
Line Total: USD 11.22

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

IGLT65R045D2ATMA1 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 01 May to Mon. 05 May MOQ : 1 Multiples : 1	1 : USD 11.22 10 : USD 8.481 25 : USD 7.755 100 : USD 6.952 250 : USD 6.743 1800 : USD 5.731 3600 : USD 5.72

We are delighted to provide the IGLT65R045D2ATMA1 from our GaN FETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGLT65R045D2ATMA1 and other electronic components in the GaN FETs category and beyond.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category GaN FETs GaN FETs
Mounting Style SMD/SMT SMD/SMT
Transistor Polarity N - Channel N - Channel
Number of Channels 1 Channel 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V 650 V
Id - Continuous Drain Current 38 A 38 A
Rds On - Drain-Source Resistance 54 mOhms 54 mOhms
Vgs - Gate-Source Voltage - 10 V - 10 V
Vgs th - Gate-Source Threshold Voltage 1.6 V 1.6 V
Qg - Gate Charge 8.4 nC 8.4 nC
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 125 W 125 W
Package / Case PG - HDSOP - 16 PG - HDSOP - 16