X-On Electronics has gained recognition as a prominent supplier of IGLT65R055D2ATMA1 GaN FETs across the USA, India, Europe, Australia, and various other global locations. IGLT65R055D2ATMA1 GaN FETs are a product manufactured by Infineon. We provide cost-effective solutions for GaN FETs, ensuring timely deliveries around the world.

IGLT65R055D2ATMA1 Infineon

Name: IGLT65R055D2ATMA1
Brand: Infineon
SKU: IGLT65R055D2ATMA1_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IGLT65R055D2ATMA1 electronic component of Infineon

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Part No.	IGLT65R055D2ATMA1
Manufacturer:	Infineon
Category:	GaN FETs
Description:	GaN FETs
Datasheet:	IGLT65R055D2ATMA1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 8.868 ea
Line Total: USD 8.87

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

IGLT65R055D2ATMA1 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 01 May to Mon. 05 May MOQ : 1 Multiples : 1	1 : USD 8.868 10 : USD 6.556 25 : USD 5.995 100 : USD 5.379 250 : USD 5.06 500 : USD 4.906 1000 : USD 4.697 1800 : USD 4.675 3600 : USD 4.609

We are delighted to provide the IGLT65R055D2ATMA1 from our GaN FETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGLT65R055D2ATMA1 and other electronic components in the GaN FETs category and beyond.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

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CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category GaN FETs GaN FETs
Mounting Style SMD/SMT SMD/SMT
Transistor Polarity N - Channel N - Channel
Number of Channels 1 Channel 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V 650 V
Rds On - Drain-Source Resistance 66 mOhms 66 mOhms
Vgs - Gate-Source Voltage - 10 V - 10 V
Vgs th - Gate-Source Threshold Voltage 1.6 V 1.6 V
Qg - Gate Charge 6.6 nC 6.6 nC
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 104 W 104 W
Channel Mode Enhancement Enhancement
Package / Case PG - HDSOP - 16 PG - HDSOP - 16