PD - 90369 REPETITIVE AVALANCHE AND dv/dt RATED IRF140 100V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF140 100V 0.077 28 A The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resis- TO-3 tance combined with high transconductance superior re- verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- Features: lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature Repetitive Avalanche Ratings stability of the electrical parameters. Dynamic dv/dt Rating Hermetically Sealed They are well suited for applications such as switching Simple Drive Requirements power supplies, motor controls, inverters, choppers, audio Ease of Paralleling amplifiers and high energy pulse circuits. Absolute Maximum Ratings Parameter Units I V = 0V, T = 25C Continuous Drain Current 28 D GS C A I V = 0V, T = 100C Continuous Drain Current 20 D GS C I Pulsed Drain Current 112 DM P T = 25C Max. Power Dissipation 125 W D C Linear Derating Factor 1.0 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 250 mJ AS I Avalanche Current 28 A AR E Repetitive Avalanche Energy 12.5 mJ AR dv/dt Peak Diode Recovery dv/dt 5.5 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 11.5(typical) g For footnotes refer to the last page www.irf.com 1 01/24/01IRF140 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 1.0mA DSS GS D BV / T Temperature Coefficient of Breakdown 0.13 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.077 V =10V, I = 20A DS(on) GS D Resistance 0.089 V =10V, I = 28A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I =250A GS(th) DS GS D g Forward Transconductance 9.1 S ( )V > 15V, I = 20A fs DS DS I Zero Gate Voltage Drain Current 25 V =80V, V =0V DSS DS GS A 250 V =80V DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V = -20V GSS GS Q Total Gate Charge 30 59 V =10V, ID 28A g GS = Q Gate-to-Source Charge 2.4 12 nC V =50V gs DS Q Gate-to-Drain (Miller) Charge 12 30.7 gd t Turn-On Delay Time 21 V =50V, I =28A, d(on) DD D t Rise Time 145 R =9.1 r G ns t Turn-Off Delay Time 21 d(off) t Fall Time 105 f L L Total Inductance 6.1 nH S + D Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) C Input Capacitance 1660 V = 0V, V = 25V iss GS DS C Output Capacitance 550 pF f = 1.0MHz oss C Reverse Transfer Capacitance 120 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 28 S A I Pulse Source Current (Body Diode) 112 SM V Diode Forward Voltage 1.5 V T = 25C, I = 28A, V = 0V j SD S GS t Reverse Recovery Time 400 nS Tj = 25C, I = 28A, di/dt 100A/ s rr F Q Reverse Recovery Charge 2.9 C V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction to Case 1.0 thJC C/W R Junction to Ambient 30 Typical socket mount thJA For footnotes refer to the last page 2 www.irf.com