4N35X, 4N36X, 4N37X, 4N35, 4N36, 4N37, OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS Dimensions in mm 2.54 z UL recognised, File No. E91231 Package System GG 1 6 7.0 X SPECIFICATION APPROVALS 25 6.0 zz z zz VDE 0884 in 3 available lead forms : - 34 - STD 1.2 - G form - SMD approved to CECC 00802 7.62 7.62 6.62 4.0 z 3.0 13 DESCRIPTION 0.5 Max 3.0 The 4N35, 4N36, 4N37 series of optically 0.26 3.35 0.5 coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. ABSOLUTE MAXIMUM RATINGS FEATURES (25C unless otherwise specified) z Options :- 10mm lead spread - add G after part no. Storage Temperature -55C to + 150C Surface mount - add SM after part no. Operating Temperature -55C to + 100C Tape&reel - add SMT&R after part no. Lead Soldering Temperature z High Current Transfer Ratio (100% min.) (1/16 inch (1.6mm) from case for 10 secs) 260C z High Isolation Voltage (5.3kV ,7.5kV ) RMS PK z All electrical parameters 100% tested INPUT DIODE z Custom electrical selections available Forward Current 60mA Reverse Voltage 6V APPLICATIONS Power Dissipation 105mW z DC motor controllers z Industrial systems controllers z Measuring instruments OUTPUT TRANSISTOR z Signal transmission between systems of different potentials and impedances Collector-emitter Voltage BV 30V CEO Collector-base Voltage BV 70V CBO Emitter-collector Voltage BV 6V ECO OPTION SM OPTION G Collector Current 50mA SURFACE MOUNT 7.62 Power Dissipation 160mW POWER DISSIPATION 0.6 1.25 Total Power Dissipation 200mW 0.1 0.26 0.75 (derate linearly 2.67mW/C above 25C) 10.46 10.16 9.86 ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 17/7/08 DB90046ELECTRICAL CHARACTERISTICS ( T = 25C Unless otherwise noted ) A PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V ) 1.2 1.5 V I = 10mA F F Reverse Current (I)10 AV = 6V R R Output Collector-emitter Breakdown (BV )30 V I = 1mA CEO C ( Note 2 ) Collector-base Breakdown (BV)70 V I = 100A CBO C Emitter-collector Breakdown (BV ) 6 V I = 10A ECO E Collector-emitter Dark Current (I)50nA V = 10V CEO CE Coupled Current Transfer Ratio (CTR) 100 % 10mA I , 10V V F CE Collector-emitter Saturation VoltageV 0.3 V 10mA I , 0.5mA I CE(SAT) F C Input to Output Isolation Voltage V 5300 V See note 1 ISO RMS 7500 V See note 1 PK 10 Input-output Isolation Resistance R 5x10 V = 500V (note 1) ISO IO Output Rise Time tr 2 sV = 5V , I = 10mA CC F Output Fall Time tf 2 sR = 75 ( FIG 1) L Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. V CC Input t t on off R = 75 L t t Output f r Output 10% 10% 90% 90% FIG 1 DB90046m-AAS/A5 17/7/08