H11A1X, H11A2X, H11A3X, H11A4X, H11A5X H11A1, H11A2, H11A3, H11A4, H11A5 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm APPROVALS 2.54 z UL recognised, File No. E91231 1 6 Package Code GG 7.0 25 6.0 X SPECIFICATION APPROVALS 34 z VDE 0884 in 3 available lead form : - 1.2 - STD - G form 7.62 7.62 - SMD approved to CECC 00802 6.62 4.0 3.0 z H11A1-4 Certified to EN60950 by :- Nemko - Certificate No. P01102464 13 0.5 Max 3.0 0.26 3.35 0.5 DESCRIPTION The H11A series of optically coupled isolators consist of infrared light emitting diode and NPN ABSOLUTE MAXIMUM RATINGS silicon photo transistor in a standard 6 pin dual (25C unless otherwise specified) in line plastic package. Storage Temperature -55C to + 150C FEATURES Operating Temperature -55C to + 100C z Options :- Lead Soldering Temperature 10mm lead spread - add G after part no. (1/16 inch (1.6mm) from case for 10 secs) 260C Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. INPUT DIODE z High Isolation Voltage (5.3kV ,7.5kV ) RMS PK z All electrical parameters 100% tested Forward Current 60mA z Custom electrical selections available Reverse Voltage 6V Power Dissipation 105mW APPLICATIONS z DC motor controllers z Industrial systems controllers OUTPUT TRANSISTOR z Measuring instruments z Signal transmission between systems of Collector-emitter Voltage BV 30V CEO different potentials and impedances Collector-base Voltage BV 70V CBO Emitter-collector Voltage BV 6V ECO Collector Current 50mA OPTION G OPTION SM SURFACE MOUNT 7.62 Power Dissipation 160mW POWER DISSIPATION 0.6 Total Power Dissipation 200mW 1.25 0.1 0.26 0.75 (derate linearly 2.67mW/C above 25C) 10.46 10.16 9.86 ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1UD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales isocom.co.uk ELECTRICAL CHARACTERISTICS ( T = 25C Unless otherwise noted ) A PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V ) 1.2 1.5 V I = 10mA F F Reverse Current (I)10 AV = 6V R R Output Collector-emitter Breakdown (BV )30 V I = 1mA CEO C ( note 2 ) Collector-base Breakdown (BV)70 V I = 100A CBO C Emitter-collector Breakdown (BV ) 6 V I = 100A ECO E Collector-emitter Dark Current (I)50nA V = 10V CEO CE Coupled Current Transfer Ratio (CTR) H11A1 50 % 10mA I , 10V V F CE H11A2 20 % 10mA I , 10V V F CE H11A3 20 % 10mA I , 10V V F CE H11A4 10 % 10mA I , 10V V F CE H11A5 30 % 10mA I , 10V V F CE Collector-emitter Saturation VoltageV 0.4 V 10mA I , 0.5mA I CE(SAT) F C Input to Output Isolation Voltage V 5300 V See note 1 ISO RMS 7500 V See note 1 PK 10 Input-output Isolation Resistance R 5x10 V = 500V (note 1) ISO IO Output Rise Time tr 2 sV = 5V , I = 10mA CC F Output Fall Time tf 2 sR = 75 fig 1 L Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. V CC Input t t on off R L t t Output f r Output 10% 10% 90% 90% FIG 1 17/7/08 DB91041m-AAS/A3