H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm APPROVALS 2.54 z UL recognised, File No. E91231 Package System GG 1 6 7.0 X SPECIFICATION APPROVALS 25 6.0 z VDE 0884 in 3 available lead form : - 34 - STD 1.2 - G form - SMD approved to CECC 00802 7.62 7.62 z Certified to EN60950 by 6.62 4.0 Nemko - Certificate No. P01102464 3.0 13 0.5 Max 3.0 DESCRIPTION 0.26 3.35 0.5 The H11AV series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) FEATURES z Options :- Storage Temperature -55C to + 150C 10mm lead spread - add G after part no. Operating Temperature -55C to + 100C Surface mount - add SM after part no. Lead Soldering Temperature Tape&reel - add SMT&R after part no. (1/16 inch (1.6mm) from case for 10 secs) 260C z High Isolation Voltage (5.3kV ,7.5kV ) RMS PK z High BV (70V min) INPUT DIODE CEO z All electrical parameters 100% tested z Custom electrical selections available Forward Current 60mA APPLICATIONS Reverse Voltage 6V z DC motor controllers Power Dissipation 105mW z Industrial systems controllers z Measuring instruments OUTPUT TRANSISTOR z Signal transmission between systems of different potentials and impedances Collector-emitter Voltage BV 70V CEO Collector-base Voltage BV 70V CBO Emitter-collector Voltage BV 6V ECO Collector Current 50mA OPTION SM OPTION G Power Dissipation 160mW 7.62 SURFACE MOUNT POWER DISSIPATION Total Power Dissipation 200mW 0.6 (derate linearly 2.67mW/C above 25C) 1.25 0.26 0.1 0.75 10.46 10.16 9.86 ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 17/7/08 DB92055ELECTRICAL CHARACTERISTICS ( T = 25C Unless otherwise noted ) A PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V ) 1.2 1.5 V I = 10mA F F Reverse Current (I)10 AV = 6V R R Output Collector-emitter Breakdown (BV )70 V I = 1mA CEO C ( note 2 ) Collector-base Breakdown (BV)70 V I = 100A CBO C Emitter-collector Breakdown (BV ) 6 V I = 100A ECO E Collector-emitter Dark Current (I)50nA V = 10V CEO CE Coupled Current Transfer Ratio (CTR) H11AV1 100 300 % 10mA I , 10V V F CE H11AV2 50 % 10mA I , 10V V F CE H11AV3 20 % 10mA I , 10V V F CE Collector-emitter Saturation VoltageV 0.4 V 20mA I , 2mA I CE(SAT) F C Input to Output Isolation Voltage V 5300 V See note 1 ISO RMS 7500 V See note 1 PK 10 Input-output Isolation Resistance R 5x10 V = 500V (note 1) ISO IO Rise Time, tr 2 sV = 5V , fig 1 CC Fall Time, tf 2 sI = 10mA, R = 75 F L Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. V CC Input t t on off R = 75 L t t Output f r Output 10% 10% 90% 90% FIG 1 DB92055m-AAS/A3 17/7/08