H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm X SPECIFICATION APPROVALS 2.54 zz z zz VDE 0884 in 3 available lead forms : - 1 6 - STD 7.0 25 - G form 6.0 - SMD approved to CECC 00802 34 1.2 7.62 7.62 6.62 4.0 DESCRIPTION 3.0 The H11D series of optically coupled isolators 13 0.5 Max consist of infrared light emitting diode and 3.0 NPN silicon photo transistor in a standard 6 pin 0.26 3.35 0.5 dual in line plastic package. ABSOLUTE MAXIMUM RATINGS FEATURES (25C unless otherwise specified) z Options :- 10mm lead spread - add G after part no. Storage Temperature -55C to + 150C Surface mount - add SM after part no. Operating Temperature -55C to + 100C Tape&reel - add SMT&R after part no. Lead Soldering Temperature z High Isolation Voltage (5.3kV ,7.5kV ) RMS PK (1/16 inch (1.6mm) from case for 10 secs) 260C z High BV ( 300V - H11D1, H11D2 ) CER ( 200V - H11D3, H11D4 ) INPUT DIODE z All electrical parameters 100% tested z Custom electrical selections available Forward Current 60mA APPLICATIONS Reverse Voltage 6V Power Dissipation 100mW z DC motor controllers z Industrial systems controllers OUTPUT TRANSISTOR z Measuring instruments z Signal transmission between systems of Collector-emitter Voltage BV (R = 1M ) different potentials and impedances CER BE H11D1, H11D2 300V H11D3, H11D4 200V Collector-base Voltage BV CBO H11D1, H11D2 300V H11D3, H11D4 200V OPTION G OPTION SM Emitter-collector Voltage BV 6V ECO SURFACE MOUNT 7.62 Collector Current 100mA Power Dissipation 150mW POWER DISSIPATION 0.6 1.25 0.26 0.1 0.75 Total Power Dissipation 250mW 10.46 10.16 (derate linearly 2.67mW/C above 25C) 9.86 ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1UD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales isocom.co.uk ELECTRICAL CHARACTERISTICS ( T = 25C Unless otherwise noted ) A PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V ) 1.2 1.5 V I = 10mA F F Reverse Current (I)10 AV = 6V R R Output Collector-emitter Breakdown (BV ) CER H11D1, H11D2 300 V I = 1mA, R = 1M C BE H11D3, H11D4 200 V ( note 2 ) Collector-base Breakdown (BV ) CBO H11D1, H11D2 300 V I = 100A C H11D3, H11D4 200 V Emitter-collector Breakdown (BV ) 6 V I = 100A ECO E Collector-emitter Dark Current (I ) CER H11D1, H11D2 100 nA V = 200V,R =1M CE BE 250 AV = 200V,R =1M, CE BE T =100C A H11D3, H11D4 100 nA V = 100V,R =1M CE BE 250 AV = 100V,R =1M, CE BE T =100C A Coupled Current Transfer Ratio (CTR) 20 % 10mA I , 10V V , F CE R = 1M BE Collector-emitter Saturation VoltageV 0.4 V 10mA I , 0.5mA I , CE(SAT) F C R = 1M BE Input to Output Isolation Voltage V 5300 V See note 1 ISO RMS 7500 V See note 1 PK 10 Input-output Isolation Resistance R 5x10 V = 500V (note 1) ISO IO Turn-on Time ton 5 sV = 10V, I = 2mA, CC C Turn-off Time toff 5 s R = 100 , fig 1 L Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. V CC Input t t on off R = 100 L t t Output f r Output 10% 10% 90% 90% FIG 1 DB91077m-AAS/A3 14/8/08