IS357 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS Dimensions in mm DESCRIPTION The IS357 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package. FEATURES z Marked as FPT1. z Current Transfer Ratio MIN. 50% z Isolation Voltage (3.75kV ,5.3kV ) RMS PK z All electrical parameters 100% tested z Drop in replacement for Sharp PC357 3.85+-0.3 APPLICATIONS z Computer terminals z Industrial systems controllers z Measuring instruments z Signal transmission between systems of different potentials and impedances ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 DB92845 27/11/08ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current 50mA Reverse Voltage 6V Power Dissipation 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BV 35V CEO Emitter-collector Voltage BV 6V ECO Collector Current 50mA Power Dissipation 150mW POWER DISSIPATION Total Power Dissipation 170mW (derate linearly 2.26mW/C above 25C) ELECTRICAL CHARACTERISTICS ( T = 25C Unless otherwise noted ) A PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V ) 1.2 1.4 V I = 20mA F F Reverse Current (I)10 AV = 4V R R Output Collector-emitter Breakdown (BV)35 V I = 0.5mA CEO C Emitter-collector Breakdown (BV ) 6 V I = 0.1mA ECO E Collector-emitter Dark Current (I ) 100 nA V = 20V CEO CE Coupled Current Transfer Ratio (CTR) 50 600 % 5mA I , 5V V F CE Optional CTR Grades: IS357A 80 160 % 5mA I , 5V V F CE IS357B 130 260 % 5mA I , 5V V F CE IS357C 200 400 % 5mA I , 5V V F CE IS357D 300 600 % 5mA I , 5V V F CE Collector-emitter Saturation VoltageV 0.2 V 20mA I , 1.0mA I CE(SAT) F C Input to Output Isolation Voltage V 3750 V See note 1 ISO RMS 5300 V See note 1 PK 10 Input-output Isolation Resistance R 5x10 V = 500V (note 1) ISO IO Output Rise Time tr 4 18 sV = 2V , CE Output Fall Time tf 3 18 sI = 2mA, R = 100 C L Note 1 Measured with input leads shorted together and output leads shorted together. 27/11/08 DB92845