IS660, IS661, IS662 IS660X, IS661X, IS662X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS Dimensions in mm z UL recognised, File No. E91231 2.54 Package Code JJ 1 6 X SPECIFICATION 7.0 APPROVALS 6.0 25 z VDE 0884 in 3 available lead form : - 34 - STD 1.2 - G form - SMD approved to CECC 00802 7.62 7.62 6.62 4.0 DESCRIPTION 3.0 The IS66 series are optically coupled isolators 13 consisting of infrared light emitting diode and a 0.5 Max high voltage NPN silicon photo darlington which 3.0 0.26 has an integral base-emitter resistor to optimise 3.35 0.5 switching speed and elevated temperature characteristics in a standard 6pin dual in line ABSOLUTE MAXIMUM RATINGS plastic package. (25C unless otherwise specified) FEATURES z Options :- Storage Temperature -40C to + 125C 10mm lead spread - add G after part no. Operating Temperature -25C to + 100C Surface mount - add SM after part no. Lead Soldering Temperature Tape&reel - add SMT&R after part no. (1/16 inch (1.6mm) from case for 10 secs) 260C z High Isolation Voltage (5.3kV ,7.5kV ) RMS PK z High Current Transfer Ratio ( 1000% min) INPUT DIODE z High BV (400V min. - IS662) Forward Current 50mA CEO (300V min. - IS661) Reverse Voltage 6V (200V min. - IS660) Power Dissipation 70mW APPLICATIONS OUTPUT TRANSISTOR z Modems z Copiers, facsimiles Collector-emitter Voltage BV 200, 300, 400V CEO z Numerical control machines Collector-base Voltage BV 200, 300, 400V CBO z Signal transmission between systems of Emitter-baseVoltage BV 6V ECO different potentials and impedances Collector Current I 150mA C Power Dissipation 300mW OPTION SM OPTION G SURFACE MOUNT 7.62 POWER DISSIPATION Total Power Dissipation 350mW 0.6 1.25 0.26 0.1 0.75 10.46 10.16 9.86 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 28/11/08 DB92260ELECTRICAL CHARACTERISTICS ( T = 25C Unless otherwise noted ) A PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V ) 1.2 1.4 V I = 10mA F F Reverse Current (I)10 AV = 4V R R Output Collector-emitter Breakdown (BV ) CEO IS660 200 V I = 1mA C IS661 300 V I = 1mA C IS662 400 V I = 1mA C Collector-base Breakdown (BV ) CBO IS660 200 V I = 0.1mA C IS661 300 V I = 0.1mA C IS662 400 V I = 0.1mA C Emitter-base Breakdown (BV)6 V I = 0.1mA EBO E Collector-emitter Dark Current (I ) CEO IS661, IS662 1 AV = 200V CE IS660 1 AV = 100V CE Coupled Current Transfer Ratio (CTR) 1000 4000 % 1mA I , 2V V F CE Collector-emitter Saturation VoltageV 1.2 V 20mA I , 100mA I CE(SAT) F C Input to Output Isolation Voltage V 5300 V See note 1 ISO RMS 7500 V See note 1 PK 10 Input-output Isolation Resistance R 5x10 V = 500V (note 1) ISO IO Input-output Capacitance Cf 1 pF V = 0, f =1MHz Cut-off frequency fc 1 kHz V = 2V, I = 20mA, CE C R = 100, R = open L BE Output Rise Time tr 300 sV = 2V, I = 20mA, CE C Output Fall Time tf 100 sR = 100, R = open L BE Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. FIGURE 1 V CC Input t t on off 100 t t r f I = 20mA C Output Input Output 10% 10% 90% 90% 28/11/08 DB92260