ISP817X, ISP817 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS ISP817X Dimensions in mm z UL recognised, File No. E91231 under 2.54 ISP817 Package System EE X SPECIFICATION APPROVALS 1 4 7.0 z VDE 0884 in 3 available lead form : - 6.0 2 3 - STD - G form 1.2 - SMD approved to CECC 00802 5.08 7.62 4.08 4.0 DESCRIPTION 3.0 The ISP817 series of optically coupled isolators 13 consist of infrared light emitting diodes and NPN 0.5 Max silicon photo transistors in space efficient dual in 3.0 0.26 line plastic packages. 3.35 0.5 FEATURES z Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High Current Transfer Ratio (50% min) z High Isolation Voltage (5.3kV ,7.5kV ) RMS PK z High BV ( 80Vmin ) CEO z All electrical parameters 100% tested z Custom electrical selections available APPLICATIONS z Computer terminals z Industrial systems controllers z Measuring instruments z Signal transmission between systems of different potentials and impedances OPTION GOPTION G OPTION GOPTION GOPTION G OPTION SMOPTION SMOPTION SMOPTION SMOPTION SM 7.62 SURFACE MOUNTSURFACE MOUNTSURFACE MOUNTSURFACE MOUNTSURFACE MOUNT 0.6 1.25 0.1 0.75 0.26 10.46 10.16 9.86 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 16/2/11 DB92275ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to +125C Operating Temperature -30C to +100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current 50mA Reverse Voltage 6V Power Dissipation 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BV 80V CEO Emitter-collector Voltage BV 6V ECO Collector Current 50mA Power Dissipation 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C) ELECTRICAL CHARACTERISTICS ( T = 25C Unless otherwise noted ) A PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V ) 1.2 1.4 V I = 20mA F F Reverse Current (I)10 AV = 4V R R Output Collector-emitter Breakdown (BV ) 80 V I = 1mA CEO C Emitter-collector Breakdown (BV ) 6 V I = 100A ECO E Collector-emitter Dark Current (I ) 100 nA V = 20V CEO CE Coupled Current Transfer Ratio (CTR) (Note 2) 50 600 % 5mA I , 5V V F CE GB 100 600 % 5mA I , 5V V F CE BL 200 600 % 5mA I , 5V V F CE A 80 160 % 5mA I , 5V V F CE B 130 260 % 5mA I , 5V V F CE C 200 400 % 5mA I , 5V V F CE D 300 600 % 5mA I , 5V V F CE Collector-emitter Saturation VoltageV 0.2 V 20mA I , 1mA I CE (SAT) F C Input to Output Isolation Voltage V 5300 V See note 1 ISO RMS 7500 See note 1 PK 10 Input-output Isolation Resistance R 5x10 V = 500V (note 1) ISO IO Output Rise Time tr 4 18 sV = 2V , CE Output Fall Time tf 3 18 sI = 2mA, R = 100 C L Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. DB92275 16/2/11