MCT2M, MCT2EM, MCT210M, MCT271M Phototransistor Optocouplers September 2009 MCT2M, MCT2EM, MCT210M, MCT271M Phototransistor Optocouplers Features Description UL recognized (File E90700, Vol. 2) The MCT2XXM series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon IEC60747-5-2 recognized (File 102497) phototransistor in a 6-pin dual in-line package. Add option V (e.g., MCT2VM) Applications Power supply regulators Digital logic inputs Microprocessor inputs Schematic Package Outlines Anode 1 6 Base Cathode 2 5 Collector No Connection 3 4 Emitter 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3MCT2M, MCT2EM, MCT210M, MCT271M Phototransistor Optocouplers Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Units TOTAL DEVICE T Storage Temperature -40 to +150 C STG T Operating Temperature -40 to +100 C OPR T Lead Solder Temperature 260 for 10 sec C SOL Total Device Power Dissipation T = 25C 250 mW P D A Derate above 25C 2.94 mW/C EMITTER I DC/Average Forward Input Current 60 mA F V Reverse Input Voltage 3 V R I (pk) Forward Current Peak (300s, 2% Duty Cycle) 3 A F LED Power Dissipation T = 25C 120 mW P D A Derate above 25C 1.41 mW/C DETECTOR I Collector Current 50 mA C Collector-Emitter Voltage 30 V V CEO P Detector Power Dissipation T = 25C 150 mW D A Derate above 25C 1.76 mW/C 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 2