TIL191, TIL191X, TIL192, TIL192X, TIL193, TIL193X, TIL191A, TIL191AX, TIL192A,TIL192AX, TIL193A, TIL193ATIL191B, TIL191BX, TIL192B, TIL192BX, TIL193B, TIL193BX HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS Dimensions in mm 2.54 TIL191 z UL recognised, file no. E91231 TIL191A Package EE TIL191B 1 4 7.0 6.0 X SPECIFICATION APPROVALS 2 3 z VDE 0884 in 3 available lead form : - 1.2 - STD - G form 5.08 7.62 - SMD approved to CECC 00802 4.08 4.0 3.0 DESCRIPTION 13 The TIL191, TIL192, TIL193 series of optically 0.5 Max coupled isolators consist of infrared light emitting 3.0 0.26 TIL192 diodes and NPN silicon photo transistors in space 3.35 0.5 TIL192A efficient dual in line plastic packages. The TIL192B standard parts TIL191, TIL192, TIL193 are tested 2.54 18 for a CTR of 20% minimum. Parts with the suffix A or B are tested for a CTR of 50 and 100% minimum 2 7 respectively. 7.0 3 6 6.0 4 5 FEATURES z Options :- 1.2 10mm lead spread - add G after part no. 10.16 7.62 Surface mount - add SM after part no. 9.16 4.0 Tape&reel - add SMT&R after part no. 3.0 z Three Current Transfer Ratio grades 13 0.5 z High Isolation Voltage (5.3kV ,7.5kV ) RMS PK Max 3.0 z All electrical parameters 100% tested 0.26 3.35 z Custom electrical selections available 0.5 1 16 TIL193 APPLICATIONS 2 15 TIL193A z Computer terminals 14 3 TIL193B z Industrial systems controllers 413 z Measuring instruments 2.54 z Signal transmission between systems of 512 different potentials and impedances 611 7.0 6.0 7 10 OPTION SM OPTION G SURFACE MOUNT 8 9 7.62 1.2 20.32 7.62 19.32 4.0 3.0 0.6 13 1.25 0.5 0.26 0.1 Max 0.75 10.46 10.16 0.26 3.35 3.0 9.86 0.5 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1UD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales isocom.co.uk ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 125C Operating Temperature -30C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current 50mA Reverse Voltage 6V Power Dissipation 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BV 35V CEO Emitter-collector Voltage BV 6V ECO Collector Current 50mA Power Dissipation 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C) ELECTRICAL CHARACTERISTICS ( T = 25C Unless otherwise noted ) A PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V ) 1.2 1.4 V I = 20mA F F Reverse Current (I ) 10 AV = 4V R R Output Collector-emitter Breakdown (BV )35 V I =0.5mA CEO C ( Note 2 ) Emitter-collector Breakdown (BV ) 6 V I = 100A ECO E Collector-emitter Dark Current (I ) 100 nA V = 20V CEO CE Coupled Current Transfer Ratio (CTR) (Note 2) TIL191, TIL192, TIL193 20 % 5mA I , 5V V F CE TIL191A, TIL192A, TIL193A 50 % TIL191B, TIL192B, TIL193B 100 % Collector-emitter Saturation VoltageV 0.4 V 5mA I , 1mA I CE (SAT) F C Input to Output Isolation Voltage V 5300 V See note 1 ISO RMS 7500 V See note 1 PK 10 Input-output Isolation Resistance R 5x10 V = 500V (note 1) ISO IO Output Rise Time tr 4 sV = 2V , CE Output Fall Time tf 3 sI = 2mA, R = 100 C L Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. DB92493 27/11/08