TLP521GB, TLP521-2GB, TLP521-4GB, TLP521, TLP521-2, TLP521-4 TLP521XGB, TLP521-2XGB, TLP521-4XGB TLP521X, TLP521-2X, TLP521-4X HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS Dimensions in mm TLP521 2.54 l UL recognised, File No. E91231 7.0 1 4 X SPECIFICATION APPROVALS 6.0 2 3 l VDE 0884 in 3 available lead form : - - STD 1.2 - G form - SMD approved to CECC 00802 5.08 7.62 l BSI approved - Certificate No. 8001 4.08 4.0 3.0 13 DESCRIPTION 0.5 Max 3.0 The TLP521, TLP521-2, TLP521-4 series of 0.26 3.35 optically coupled isolators consist of infrared TLP521-2 0.5 light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic 2.54 1 8 packages. 2 7 7.0 FEATURES 3 6 6.0 l Options :- 4 5 10mm lead spread - add G after part no. 1.2 Surface mount - add SM after part no. 10.16 7.62 Tape&reel - add SMT&R after part no. 9.16 4.0 l High Current Transfer Ratio ( 50% min) 3.0 l High Isolation Voltage (5.3kV ,7.5kV ) RMS PK 13 0.5 l High BV ( 55Vmin ) CEO Max 3.0 l All electrical parameters 100% tested 0.26 l Custom electrical selections available 3.35 0.5 1 16 APPLICATIONS TLP521-4 2 15 l Computer terminals 14 3 l Industrial systems controllers l Measuring instruments 4 13 2.54 l Signal transmission between systems of 5 12 different potentials and impedances 6 11 7.0 6.0 7 10 OPTION G OPTION SM 8 9 SURFACE MOUNT 7.62 1.2 20.32 7.62 19.32 4.0 3.0 0.6 13 1.25 0.5 0.1 0.26 Max 0.75 10.46 0.26 3.35 10.16 9.86 0.5 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/4/03 DB92546m-AAS/A3ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 125C Operating Temperature -30C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current 50mA Reverse Voltage 6V Power Dissipation 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BV 55V CEO Emitter-collector Voltage BV 6V ECO Power Dissipation 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C) ELECTRICAL CHARACTERISTICS ( T = 25C Unless otherwise noted ) A PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V ) 1.0 1.15 1.3 V I = 10mA F F Reverse Current (I ) 10 A V = 4V R R Output Collector-emitter Breakdown (BV ) 55 V I = 0.5mA CEO C ( Note 2 ) Emitter-collector Breakdown (BV ) 6 V I = 100A ECO E Collector-emitter Dark Current (I ) 100 nA V = 20V CEO CE Coupled Current Transfer Ratio (CTR) (Note 2) TLP521, TLP521-2, TLP521-4 50 600 % 5mA I , 5V V F CE CTR selection available BL 200 600 % GB 100 600 % GB 30 % 1mA I , 0.4V V F CE Collector-emitter Saturation VoltageV 0.4 V 8mA I , 2.4mA I CE (SAT) F C -GB 0.4 V 1mA I , 0.2mA I F C Input to Output Isolation Voltage V 5300 V See note 1 ISO RMS 7500 V See note 1 PK 10 Input-output Isolation Resistance R 5x10 V = 500V (note 1) ISO IO Response Time (Rise), tr 4 s V = 2V , CE Response Time (Fall), tf 3 s I = 2mA, R = 100 C L Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. 7/4/03 DB92546m-AAS/A3