M C C
R
Micro Commercial Components
Micro Commercial Components
20736 Marilla Street Chatsworth
MCB150N06YB
CA 91311
Phone:(818) 701-4933
Fax: (818) 701-4939
Features
High density cell design for ultra low R
dson
N-Channel
Fully characterized avalanche voltage and current
Halogen free available upon request by adding suffix-H
Enhancement Mode
Good stability and uniformity with high E
AS
Excellent package for good heat dissipation
Field Effect Transistor
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
2
O
D -PACK
Maximum Ratings @ 25 C Unless Otherwise Specified
Parameter Symbol Maximum Units
S
Drain-Source Voltage V 60 V
DS
A V
Gate-Source Voltage V 20 V
GS
T =25C 150
Continuous Drain C
I A
D
C
T =100C
Current C 105
1
B
Pulsed Drain Current I 500 A
DM
G
B
E 550 mJ
Avalanche energy L=0.5mH AS B
2 4
T =25C 187
C
A
P
Power Dissipation W
DSM
T =100C 3
C 94
Junction and Storage Temperature Range T , T -55 to 175 C
J STG
D
Thermal Characteristics
Parameter Symbol Maximum Units
C
Maximum Junction-to-Case Steady-State R 0.71 0.80 C/W
JC
H
E
Internal Block Diagram J
K
1.GATE
2.DRAIN
D 3.SOURCE
DIMENSIONS
INCHES MM
DIM NOTE
MIN MAX MIN MAX
A .320 .359 8.13 9.14
B .380 .411 9.65 10.45
C .160 .190 4.06 4.83
D .020 .035 0.51 0.89
G
E .045 .055 1.14 1.40
G .095 .105 2.41 2.67
H .096 .120 2.43 3.03
J .014 .021 0.35 0.53
K .090 .110 2.29 2.79
S
S .575 .625 14.60 15.80
V .045 .055 1.14 1.40
SUGGESTED SOLDER PAD LAYOUT
.740
18.79
.065
Inches 1.65
mm
.420
10.66
.070
1.78
.120
3.05
.330
8.38
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Revision: A
2017/02/01M C C
R
Micro Commercial Components
Electrical Characteristics (T =25C unless otherwise noted)
J
Symbol Parameter Conditions Min Typ Max Units
STATIC PARAMETERS
I =250A, V =0V
BV Drain-Source Breakdown Voltage 60 V
D GS
DSS
V =60V, V =0V 1
DS GS
I
Zero Gate Voltage Drain Current A
DSS
T =55C 5
J
I Gate-Body leakage current V =0V, V =20V 100 nA
GSS DS GS
V =V , I =250A
V Gate Threshold Voltage 223 4 V
GS(th) DS GS D
V =10V, I =50A
4.6 5.5
GS D
R Static Drain-Source On-Resistance
m
DS(ON)
T =125C 7.7 9.22
J
V =5V, I =50A
g Diode Forward Voltage 80 S
DS D
FS
V Diode Forward Voltage I =50A,V =0V 0.85 0.99 V
SD S GS
C
I Maximum Body-Diode Continuous Current 150 A
S
DYNAMIC PARAMETERS
C Input Capacitance 3800 pF
iss
V =0V, V =30V, f=1MHz
C Output Capacitance 430 pF
GS DS
oss
C Reverse Transfer Capacitance 190 pF
rss
V =0V, V =0V, f=1MHz
R Gate resistance 2.6
GS DS
g
SWITCHING PARAMETERS
Q Total Gate Charge 69 nC
g
V =10V, V =30V, I =50A
Q Gate Source Charge 33 nC
GS DS D
gs
Q Gate Drain Charge 15 nC
gd
t Turn-on Delay Time 18 ns
D(on)
t Turn-on Rise Time V =10V, V =30V, R =2.5, 35
ns
r GS DS L
R =3
t Turn-off Delay Time 44 ns
GEN
D(off)
t Turn-off Fall Time 23 ns
f
I =50A,di/dt=500A/us
t Body Diode Reverse Recovery Time 53 ns
F
rr
I =50A,di/dt=500A/us
Q Body Diode Reverse Recovery charge 98
F
rr nC
A. ThevalueofRJAismeasuredwiththedevicemountedon1in2FR4boardwith2oz.Copper,inastillairenvironmentwithTA =25C.ThePower
dissipationPDSM isbasedonRJAt10sandthemaximumallowedjunctiontemperatureof150C.Thevalueinanygivenapplicationdependson
theuser'sspecificboarddesign.
B. SinglepulsewidthlimitedbyjunctiontemperatureTJ(MAX)=175C.
C. Themaximumcurrentratingispackagelimited.
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Revision: A 2017/02/01