X-On Electronics has gained recognition as a prominent supplier of KBL408G Bridge Rectifiers across the USA, India, Europe, Australia, and various other global locations. KBL408G Bridge Rectifiers are a product manufactured by JGD SEMICONDUCTORS. We provide cost-effective solutions for Bridge Rectifiers, ensuring timely deliveries around the world.

KBL408G JGD SEMICONDUCTORS

KBL408G electronic component of JGD SEMICONDUCTORS
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See Product Specifications
Part No.KBL408G
Manufacturer: JGD SEMICONDUCTORS
Category: Bridge Rectifiers
Description: Single-phase bridge rectifier; Urmax:800V; If:4A; Ifsm:120A; KBL
Datasheet: KBL408G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7056 ea
Line Total: USD 0.71

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1
Multiples : 1
1 : USD 0.7056
5 : USD 0.2997
25 : USD 0.2648
59 : USD 0.2299
161 : USD 0.2176

   
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We are delighted to provide the KBL408G from our Bridge Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the KBL408G and other electronic components in the Bridge Rectifiers category and beyond.

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KBL408G is a NPN Silicon Darlington Transistor made by JGD Semiconductors. It is designed for use in applications demanding high gain and saturated switching capacity, such as amplifier and switch circuits. It is capable of a Collector-Emitter voltage of up to 800 volts and a maximum Collector current of 4 amperes. It is also UL Recognized and has a Junction Temperature of up to 175°C (347°F).

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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