HBR20100-220 Jilin

Sino-MicroelectronicsThe HBR20100-220 with Schottky Barrier Diodes (SBD) TO-220 RoHS manufactured by Jilin Sino-Microelectronics is a high-quality, low-power diode with a base electrode comprised of a metal-dielectric sandwich. This type of diode works by forming a Schottky barrier at the junction of the metal-dielectric interface that blocks the current flow from the n-type region to the p-type region, creating a rectifying effect.The HBR20100-220 is a compact device designed for space-constrained applications. It has an operating temperature range of -55 to +125°C and features an improved power dissipation of up to 1.0 A at 115°C. It has a low forward voltage drop of 0.7 V at 1 A and a total capacitance of only 6 pF, ensuring fast switching capability for a wide array of digital applications.In addition, its RoHS compliant housing provides users with the assurance of a lead-free component while its TO-220 form factor simplifies heat dissipation. The HBR20100-220 has an ozone resistance of 10 ppm/yr for long-term reliability. The HBR20100-220 is a high-grade component suitable for a variety of applications. Whether for automotive, computer or industrial electronics, this SBD TO-220 RoHS diode from Jilin Sino-Microelectronics offers a reliable and efficient solution for current rectification and power conversion.