HMMC-5620 Keysight

Keysight Technologies HMMC-5620 6-20 GHz High-Gain Ampliefi r Data Sheet Features Wide-frequency range: 6-20 GHz High gain: 17 dB Gain flatness: 1.0 dB Return loss: Input 15 dB Output 15 dB Single bias supply operation Low DC power dissipation: P ~0.5 watts DC Medium power: 20 GHz: P : 12 dBm 1 dB P : 13 dBm sat02 Keysight HMMC-5620 6-20 GHz High-Gain Amplifier Data Sheet Description The Keysight Technologies, Inc. HMMC-5620 is a wideband GaAs MMIC amplifier designed for medium output power and high gain over the 6 to 20 GHz frequency range. Four MESFET cascade stages provide high gain, while the single bias supply offers ease of use. E-Beam lithography is used to produce gate lengths of ~0.3 m. The HMMC-5620 incorporates advanced MBE technology, Ti-Pt-Au gate metallization, silicon nitride passivation, and polyimide for scratch protection. Chip size: 1410 1010 m (55.5 39.7 mils) Chip size tolerance: 1 Absolute Maximum Ratings 10 m (0.4 mils) Chip thickness: 127 15 m (5 0.6 mils) Symbol Parameters/conditions Min Max Units Pad dimensions: V Positive drain voltage 7.55 volts DD 80 80 m (2.95 2.95 mils), or larger I Total drain current 3.0 135 mA DD P DC power dissipation 1.0 watts DC P CW input power 20 dBm in T Operating channel temperature +160 C ch T Operating case temperature 55 C case T Storage Temperature 65 +165 C st T Maximum Assembly Temperature (for 60 seconds max.) 300 C max 1. Operation in excess of any one of these conditions may result in permanent damage to this device. T = 25 C except for T , T , and T . A ch stg max 1 DC Specifications/Physical Properties Symbol Parameters/conditions Min. Typ. Max Units I Drain current (V = +5.0 V) 100 70 135 mA DD DD I Drain current (V = +7.0 V) 105 mA DD DD chbs Thermal resistance (T = 25 C) 70 C/Watt backside 1. Measured in wafer form with T = 25 C. (Except ) chuck ch-bs