Memory Module Speci cations KVR13S9S8K2/8 8GB (4GB 1Rx8 512M x 64-Bit x 2 pcs.) PC3-10600 CL9 204-Pin SODIMM Kit DESCRIPTION SPECIFICATIONS ValueRAM s KVR13S9S8K2/8 is a kit of two 512M x 64-bit CL(IDD) 9 cycles (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 Row Cycle Time (tRCmin) 49.5ns (min.) memory modules, based on eight 512M x 8-bit FBGA compo- Refresh to Active/Refresh 260ns (min.) nents per module. Total kit capacity is 8GB. The SPDs are Command Time (tRFCmin) programmed to JEDEC standard latency DDR3-1333 timing of Row Active Time (tRASmin) 36ns (min.) 9-9-9 at 1.5V. Each 204-pin SODIMM uses gold contact fingers. Maximum Operating Power 2.100 W* (per module) The electrical and mechanical specifications are as follows: UL Rating 94 V - 0 o o Operating Temperature 0 C to 85 C o o Storage Temperature -55 C to +100 C FEATURES JEDEC standard 1.5V (1.425V ~1.575V) Power Supply *Power will vary depending on the SDRAM used. VDDQ = 1.5V (1.425V ~ 1.575V) 667MHz fCK for 1333Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write either on the fly using A12 or MRS Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C Asynchronous Reset PCB: Height 1.18 (30mm), double sided component Continued >> Document No. VALUERAM1286-001.A00 03/12/13 Page 1MODULE DIMENSIONS: Document No. VALUERAM1286-001.A00 Page 2