X-On Electronics has gained recognition as a prominent supplier of KVR16LE11S8/4 across the USA, India, Europe, Australia, and various other global locations. KVR16LE11S8/4 are a product manufactured by Kingston. We provide cost-effective solutions for KVR16LE11S8/4, ensuring timely deliveries around the world.

KVR16LE11S8/4 Kingston

KVR16LE11S8/4 electronic component of Kingston
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Part No.KVR16LE11S8/4
Manufacturer: Kingston
Category: Unclassified
Description: 4GB 1RX8 512M X 72-BIT PC3L-12800 CL11 240-PIN ECC DIMM
Datasheet: KVR16LE11S8/4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 50.1187 ea
Line Total: USD 100.24 
Availability - 0
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2
Multiples : 1
2 : USD 50.1187

   
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We are delighted to provide the KVR16LE11S8/4 from our Kingston manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the KVR16LE11S8/4 and other electronic components in the Kingston manufacturer and beyond.

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Memory Module Speci cations KVR16LE11S8/4 4GB 1Rx8 512M x 72-Bit PC3L-12800 CL11 240-Pin ECC DIMM DESCRIPTION SPECIFICATIONS This document describes ValueRAM s 512M x 72-bit (4GB) CL(IDD) 11 cycles DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, ECC, Row Cycle Time (tRCmin) 48.125ns (min.) low voltage, memory module, based on nine 512M x 8-bit FBGA Refresh to Active/Refresh 260ns (min.) components. The SPD is programmed to JEDEC standard Command Time (tRFCmin) latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This Row Active Time (tRASmin) 35ns (min.) 240-pin DIMM uses gold contact fingers. The electrical and Maximum Operating Power (1.35V) = 1.822 W* mechanical specifications are as follows: (1.50V) = 2.025 W* UL Rating 94 V - 0 o o C to 85 C Operating Temperature 0 FEATURES o o Storage Temperature -55 C to +100 C JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply *Power will vary depending on the SDRAM. VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) 800MHz fCK for 1600Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 11, 10, 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write either on the fly using A12 or MRS Bi-directional Differential Data Strobe Thermal Sensor Grade B Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C Asynchronous Reset PCB: Height 1.18 (30mm), single sided component Continued >> Document No. VALUERAM1340-001.A00 04/26/13 Page 1MODULE DIMENSIONS: Document No. VALUERAM1340-001.A00 Page 2

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