KEL5002A-A

AUK CORP. Infrared Emitting Diode KEL5002A Description The KEL5002A is GaAlAs infrared emitting diode that is designed for high power, low forward voltage This device is optimized for speed and efficiency at emission wavelength 940nm and has a high radient efficiency over a wide range of forward current. 1 2 This device is packaged T13/4 package. Pin Connection Features 1. Anode 2. Cathode 940nm wavelength Low forward voltage High power and high reliability Available for pulse operating Applications IR Audio and Telephone IR communication Optical Switch Available for wireless digital data transmission T = 25 Absolute Maximum Ratings A Parameter Symbol Min. Max. Max. V Reverse Voltage - 5 V R I Forward Current - 100 F P - Power Dissipation 170 D I Pulse Forward Current*1 - 1.0 A FP Operating Temperature Topr -30 85 Storage Temperature Tstg -30 100 Soldering Temperature*2 Tsol - 260 *1 : Pulse Width : Tw 100, Periode : T = 10 *2 : MAX 5s The contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications.-100 -80 -60 -40 100 50 -20 50 KEL5002A Rating and Characteristic Curves Power dissipation Vs. Relative intensity Vs. Ambient temperature Forward current (/) () 3 10 160 120 2 10 80 1 10 40 0 0 10 0 1 2 3 0 20 40 60 80 100 () () 10 10 10 10 Ambient temperature(Ta) Forward current(I )F Forward current Vs. Relative intensity Vs. Forward voltage Wavelength (%) () Ta=25 100 100 80 60 50 40 20 0 0 0 0.5 1.0 1.5 2.0 (V) 400 500 600 700 800 900 1000 Forward voltage(V )F Wavelength() Radiant Pattern Angle(deg.) 0 0 Relative intensity(%) The contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications. 100 50 + 0 2 +40 +60 +80 Forward current(I F) Power dissipation(PD) Radiant intensity(P O) Relative intensity +100