LTE-209 Lite-On

IR Emitter and Detector Product Data Sheet LTE-209 Spec No. DS-50-92-0001 Effective Date: 02/09/2001 Revision: C LITE-ON ENG 03/14/2014 PRELIMINARY LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C. Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660 L I T E -ON E L E C T R O N I C S , INC. P r o p e r t y o f L i t e - O n O n l y FEATURES * SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES * LOW COST MINIATURE PLASTIC END LOOKING PACKAGE * MECHANICALLY AND SPECTRALLY MATCHED TO THE LTR-4206 SERIES OF PHOTOTRANSISTOR * THE LTE-209 SERIES ARE MADE WITH GALLIUM ALUMINUM ARSENIDE WINDOW LAYER ON GALLIUM ARSENIDE INFRARED EMITTING DIODES PACKAGE DIMENSIONS NOTES: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25mm(.010 ) unless otherwise noted. 3. Protruded resin under flange is 1.0mm(.039 ) max. 4. Lead spacing is measured where the leads emerge from the package. 5. Specifications are subject to change without notice. Part No. : LTE-209 DATA SHEET Page : 1 of 3 BNS-OD-C131/A4