X-On Electronics has gained recognition as a prominent supplier of LTE-R38386A-ZF-U Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. LTE-R38386A-ZF-U Infrared Emitters - High Power are a product manufactured by Lite-On. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

LTE-R38386A-ZF-U Lite-On

LTE-R38386A-ZF-U electronic component of Lite-On
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Part No.LTE-R38386A-ZF-U
Manufacturer: Lite-On
Category: Infrared Emitters - High Power
Description: Infrared Emitters - High Power High Power IR SMD LED
Datasheet: LTE-R38386A-ZF-U Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4762 ea
Line Total: USD 1.48 
Availability - 22064
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
22064
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.4762
10 : USD 1.0428
100 : USD 0.8777
600 : USD 0.8723
1200 : USD 0.871
4800 : USD 0.8696
9600 : USD 0.8629
24600 : USD 0.8616

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Illumination Color
Brand
Lens Shape
Viewing Angle
Fall Time
Moisture Sensitive
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the LTE-R38386A-ZF-U from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LTE-R38386A-ZF-U and other electronic components in the Infrared Emitters - High Power category and beyond.

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IR Emitter and Detector LTE-R38386A-ZF-U 1. Description Lite-On offers a broad range of discrete infrared components for application such as remote control, IR wireless data transmission, security alarm & etc. Customers need infrared solutions featuring high power, high speed and wide viewing angels. The product line includes GaAs 940nm IREDs, AlGaAs high speed 850nm IREDs, PIN Photodiodes and Phototransistors. Photodiodes and Phototransistors can be provided with a filter that reduces digital light noise in the sensor function, which enables a high signal-to-noise ratio. 1. 1. Features 1.2. Applications High power LED light source Infrared emitter High performance, long life PCB Mounted Infrared Sensor High LED driving current Meet ROHS, Green Product 2. Outline Dimensions Notes : 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.1mm (.004 ) unless otherwise noted. 3. Specifications are subject to change without notice. Part No. : LTE-R38386A-ZF-U BNS-OD-FC 002/A4 1/6 IR Emitter and Detector LTE-R38386A-ZF-U 3. Absolute Maximum Ratings at TA=25C Parameter Maximum Rating Unit Power Dissipation 2.5 W Peak Forward Current(300pps, 10s pulse) 5 A DC Forward Current 1 A Reverse Voltage 5 V Thermal Resistance Junction 10 K/W Operating Temperature Range -40C to + 85C Storage Temperature Range -55C to + 100C Infrared Soldering Condition 260C for 10 Seconds Max. 4. Electrical / Optical Characteristics at TA=25C Parameter Symbol Min. Typ. Max. Unit Test Condition I = 1A F Radiant Intensity I 150 200 - mW/sr E Total Radiant Flux - 800 - mW I = 1A e F Peak Emission Wavelength - 850 - nm I = 1A Peak F I = 1A F Spectral Line Half-Width - 50 - nm Forward Voltage V - 1.8 2.5 V I = 1A F F Reverse Current I - - 10 A V = 5V R R Rise/Fall Time Tr/Tf - 30 - ns 10%~90% Viewing Angle 2 - 150 - deg 1/2 NOTE: 1. is the off-axis angle at which the luminous intensity is half the axial luminous intensity. 1/2 2. The dominant wavelength, d is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device. Part No. : LTE-R38386A-ZF-U BNS-OD-FC 002/A4 2/6

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
LITEON
LITE-ON
Lite-On Electronics
Lite-On Inc
Lite-On Inc.
Liteon Opto
LITE-ON SEMICONDUCTOR CORP.
LTN
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