Balanced Three-chip SIDACtor Device Balanced Three-chip SIDACtor Device This balanced protector is a surface mount alternative to the modified TO-220 package. 1 6 Based on a six-pin surface mount SOIC package, it uses Littelfuses patented Y 2 5 (US Patent 4,905,119) configuration. It is available in surge current ratings up to 500 A. 3 4 SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968-A (formerly known as FCC Part 68). Electrical Parameters V V V V DRM S DRM S Volts Volts Volts Volts Part V I I I I C T DRM S T H O Number * Pins 1-3, 1-4 Pins 3-4 Volts Amps mAmps Amps mAmps pF P1553U 130 180 130 180 8 5 800 2.2 150 80 P1803U 150 210 150 210 8 5 800 2.2 150 80 P2103U 170 250 170 250 8 5 800 2.2 150 80 P2353U 200 270 200 270 8 5 800 2.2 150 80 P2703U 230 300 230 300 8 5 800 2.2 150 60 P3203U 270 350 270 350 8 5 800 2.2 150 60 P3403U 300 400 300 400 8 5 800 2.2 150 60 P5103U 420 600 420 600 8 5 800 2.2 150 60 A2106U 3 ** 170 250 50 80 8 5 800 2.2 120 80 A5030U 3 ** 400 550 270 340 8 5 800 2.2 150 60 * For individual UA, UB, and UC surge ratings, see table below. ** Asymmetrical General Notes: All measurements are made at an ambient temperature of 25 C. I applies to -40 C through +85 C temperature range. PP I is a repetitive surge rating and is guaranteed for the life of the product. PP Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities. V is measured at I DRM DRM. V is measured at 100 V/s. S Special voltage (V and V ) and holding current (I ) requirements are available upon request. S DRM H Off-state capacitance (C ) is measured between Pins 1-3 and 1-4 at 1 MHz with a 2 V bias and is a typical value for UA, UB, and O UC products. Device is designed to meet balance requirements of GTS 8700 and GR 974. Surge Ratings I I I I I I PP PP PP PP PP TSM 2x10 s 8x20 s 10x160 s 10x560 s 10x1000 s 60 Hz di/dt Series Amps Amps Amps Amps Amps Amps Amps/s A 150 150 90 50 45 20 500 B 250 250 150 100 80 30 500 C 500 400 200 150 100 50 500 Balanced Three-chip SIDACtor Device Thermal Considerations Package Symbol Parameter Value Unit Modified MS-013 T Operating Junction Temperature Range -40 to +125 C J 6 T Storage Temperature Range -65 to +150 C S 5 4 R Thermal Resistance: Junction to Ambient 60 C/W JA 1 2 3 +I +I t = rise time to peak value r I IT T t = decay time to half value d Peak 100 Value I IS S I IH H Waveform = t x t r d II DRMDRM -V 50 -V +V+V Half Value V V VT VDRM DRM T V S V S 0 t t r d 0 t Time (s) -I -I V-I Characteristics t x t Pulse Wave-form r d 14 2.0 12 1.8 10 1.6 8 1.4 6 25 C 25 C 1.2 4 1.0 2 0.8 0 0.6 -4 0.4 -6 -40 -20 0 20 40 60 80 100 120 140 160 -8 Case Temperature (T ) C -40 -20 0 20 40 60 80 100 120 140 160 C Junction Temperature (T ) C J Normalized V Change versus Junction Temperature Normalized DC Holding Current versus Case Temperature S 2004 Littelfuse, Inc. 2 - 21