SIDACtor Protection Thyristors Datasheet B61089BDR, Single port negative voltage tracking SLIC protector SOP-8 Programmable Battery tracking protection RoHS Pb e3 Description The B61089BDR is a single channel SLIC ( Subscriber Line Interface circuit ) battery tracking protector. It consists of a pair of identical protection thyristors integrated with two anti-series diodes to protect the SLIC against lightning induced surges and power fault events. The gated thyristor protectors which have crowbarring function, provide tracking battery protection down to -170V. The anti-series diode provides protection of positive surge events by diverting the surge energy to the ground. The B61089BDR has a robust surge current capability which help the telecom and datacom products to comply with different surge standards such as Telcordia GR-1089, ITU-T K.20, K.21 and YD/ T950. For compliance with Enhanced Levels test conditions of ITU-T, TIA968-B, or GR-1089, additional series resistance in the Tip / Ring pairs may be required. The SLIC chipset voltage reference may change as the on-hook/ off-hook line condition changes. Therefore, this component is Pinout Designation referenced to the - V so that its negative protection threshold BAT follows this changing reference voltage level. This B61089BDR utilizes a transistor gain network so that a low 5 mA current level K1 1 8 K1 will activate the thyristor based portion of this protector component 7 during negative events. This also allows an easier turn on during G 2 A slow rising power fault events. For all positive disturbances, the NC 3 6 A fast switching diode connected to earth reference will provide the needed protection. K2 4 5 K2 Features Single port negative Surge capability does not voltage tracking degrade after multiple Pin Pin Name Description programmable surge events within its component ratings 1, 4,5, 8 K1, K2 Connect to subscriber lines (Tip/Ring) Supports battery voltages High holding current 2 G Connect to battery (Reference Voltage) down to -170V -150mA min 6, 7 A Connect to ground (earth) Low gate triggering Specified 2/10 limiting current 5 mA max voltage Fails in a short circuit Integrated diodes for Schematic Symbol condition when it is positive surge protection surged in excess of its MSL: Level 1 - unlimited ratings to protect all RoHS compliant and downstream equipment lead-free K1 K1 Applicable Global Standards Wireless In the Local Digital Pair Gain systems A G Loop (WLL) (DPG) and Digital Loop A Carrier systems (DLC) Voice applications which require regenerated POTS Small Office Home Office (SOHO) VoIP applications K2 K2 PBX FXS applications 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/13/21 SIDACtor Protection Thyristors Datasheet B61089BDR, Single port negative voltage tracking SLIC protector SOP-8 Programmable Battery tracking protection Absolute Maximum Ratings (T =25C) A Symbol Parameter Test Conditions Value Unit 10/1000s 35 5/310s 65 I * Non-repetitive peak on-state pulse current A PPSM 2/10s 180 8/20s 170 0.5s 12 1s 9 I /I * Non repetitive peak on-state current, 50Hz/60Hz 5s 7 A TSM FSM 30s 4 900s 3 Non repetitive peak gate current, 2/10s pulse, I * 40 A GSM cathodes commoned V Repetitive peak off-state voltage, V =0 -170 V DRM GK V Repetitive peak gate-cathode voltage, V =0 -167 V GKRM KA T Operating free-air temperature range -40 - 85 C A T Storage temperature range -40 - 150 C STG T Junction temperature -40 - 150 C J Maximum lead temperature for soldering during 10s 260 C T L 2 R Junction to ambient thermal resistance P = 0.8 W, T = 25 C, 5 cm , FR4 PCB 160 C /W tot A JA * Notes : - Initially the protector must be in thermal equilibrium with TJ=25C. The surge may be repeated after the component returns to its initial conditions. - These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied to any cathode-anode terminal pair. Additionally, all cathode-anode terminal pairs may have their rated current values applied simultaneously (in this case the anode terminal current will be four times the rated current value of an individual terminal pair). Electrical Characteristics Symbol Parameter Test Conditions Max Unit V Forward voltage I =5A, t =200s 3 V F F w V Impulse peak forward recovery voltage 2/10s, I =-27A,Rs=50, di/dt=-27A/s 12 V FRM TM I Off-state current V = V , V =0 T =25C -5 A D D DRM GK J 2/10s, I =-27A, Rs=50, di/dt=-27A/s, TM V Impulse breakover voltage -115 V (BO) V =-100V GG 2/10s, I =-27A, Rs=50, di/dt=-27A/s, TM V Gate-cathode impulse breakover voltage 20 V GK(BO) V =-100V GG I Holding current I =-1A, di/dt=1A/ms, V =-100V -150 (min) mA H T GG I Gate reverse current V =V = V , V =0, T =25C -5 A GKS GG GK GKRM KA J I Gate trigger current I =-3A, t *20s, V =-100V, T =25C 5 mA GT T p(g) GG J V Gate trigger voltage I =-3A, t *20s, V =-100V 2.5 V GT T p(g) GG f=1MHz,V =1V, I =0 V =-3V 100 d G D C Cathode-anode off-state capacitance pF KA f=1MHz,V =1V, I =0 V =-48V 50 d G D *T : gate pulse time p(g) 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/13/21