BTA25H-600CW3G, BTA25H-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. BTA25H 600CW3G, BTA25H 800CW3G THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoCase (AC) R 1.8 C/W JC Junction toAmbient R 60 JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current I , mA DRM (V = Rated V , V Gate Open) T = 25C I 0.005 D DRM RRM J RRM T = 150C 15 J ON CHARACTERISTICS Peak On-State Voltage (Note 2) V 1.55 V TM (I = 35 A Peak) TM Gate Trigger Current (Continuous dc) (V = 12 V, R = 30 ) I mA D L GT MT2(+), G(+) 35 MT2(+), G() 35 MT2(), G() 35 Holding Current I 50 mA H (V = 12 V, Gate Open, Initiating Current = 100 mA) D Latching Current (V = 12 V, I = 42 mA) I mA D G L MT2(+), G(+) 75 MT2(+), G() 75 MT2(), G() 75 V V Gate Trigger Voltage (V = 12 V, R = 30 ) D L GT MT2(+), G(+) 1.3 MT2(+), G() 1.3 MT2(), G() 1.3 Gate NonTrigger Voltage (T = 150C) V V J GD MT2(+), G(+) 0.15 MT2(+), G() 0.15 MT2(), G() 0.15 DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (dI/dt) 4.0 A/ms c (Gate Open, T = 150C, No Snubber) J Critical Rate of Rise of OnState Current dI/dt 50 A/ s (T = 150C, f = 120 Hz, I = 2 x I , tr 100 ns) J G GT Critical Rate of Rise of Off-State Voltage dV/dt 500 V/ s (V = 0.66 x V , Exponential Waveform, Gate Open, T = 150C) D DRM J 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.