BTA30H-600CW3G, BTA30H-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. BTA30H600CW3G, BTA30H800CW3G THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoCase (AC) R 1.8 C/W JC JunctiontoAmbient R 60 JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current I , mA DRM (V = Rated V , V Gate Open) T = 25C I 0.005 D DRM RRM J RRM T = 150C 15 J ON CHARACTERISTICS Peak On-State Voltage (Notes 2 and 3) V 1.55 V TM (I = 42 A Peak) TM Threshold Voltage, TJ = 150C (Note 2) V 0.85 V to Dynamic Resistance, TJ = 150C (Note 2) R 16 m d Gate Trigger Current (Continuous dc) (V = 12 V, R = 30 ) I mA D L GT MT2(+), G(+) 8.0 35 MT2(+), G() 8.0 35 MT2(), G() 8.0 35 Holding Current I 50 mA H (V = 12 V, Gate Open, Initiating Current = 100 mA) D Latching Current (V = 12 V, I = 42 mA) I mA D G L MT2(+), G(+) 75 MT2(+), G() 75 MT2(), G() 75 Gate Trigger Voltage (V = 12 V, R = 30 ) V V D L GT MT2(+), G(+) 1.3 MT2(+), G() 1.3 MT2(), G() 1.3 Gate NonTrigger Voltage (T = 150C) V V J GD MT2(+), G(+) 0.15 MT2(+), G() 0.15 MT2(), G() 0.15 DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (dI/dt) 4.0 A/ms c (Gate Open, T = 150C, No Snubber) (Note 4) J Critical Rate of Rise of OnState Current dI/dt 50 A/ s (T = 150C, f = 120 Hz, I = 2 x I , tr 100 ns) J G GT Critical Rate of Rise of Off-State Voltage dV/dt 500 V/ s (V = 0.66 x V , Exponential Waveform, Gate Open, T = 150C) D DRM J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 3. For both polarities. 4. dv/dt(c) = 35 V/ s (exponential to 200 Vpk)