BTB12-600TW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features BTB12 600TW3G THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoCase (AC) R 1.8 C/W JC Junction toAmbient R 60 JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current I / mA DRM (V = Rated V , V Gate Open) T = 25C I 0.005 D DRM RRM J RRM T = 110C 1.0 J ON CHARACTERISTICS Peak On-State Voltage (Note 2) V 1.55 V TM (I = 17 A Peak) TM Gate Trigger Current (Continuous dc) (V = 12 V, R = 30 ) I mA D L GT MT2(+), G(+) 1.2 5.0 MT2(+), G() 1.2 5.0 MT2(), G() 1.2 5.0 Holding Current I 10 mA H (V = 12 V, Gate Open, Initiating Current = 100 mA) D Latching Current (V = 12 V, I = 7.5 mA) I mA D G L MT2(+), G(+) 15 MT2(+), G() 15 MT2(), G() 15 V V Gate Trigger Voltage (V = 12 V, R = 30 ) D L GT MT2(+), G(+) 0.5 1.3 MT2(+), G() 0.5 1.3 MT2(), G() 0.5 1.3 Gate NonTrigger Voltage (T = 110C) V V J GD MT2(+), G(+) 0.2 MT2(+), G() 0.2 MT2(), G() 0.2 DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (dI/dt) 1.75 A/ms c (Gate Open, T = 110C, No Snubber) J Critical Rate of Rise of OnState Current dI/dt 45 A/ s (T = 110C, f = 120 Hz, I = 2 x I , tr 100 ns) J G GT Critical Rate of Rise of Off-State Voltage dV/dt 10 V/ s (V = 0.66 x V , Exponential Waveform, Gate Open, T = 125C) D DRM J 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.