BTB12-600BW3G, BTB12-800BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance fullwave ac control applications where high noise immunity and high commutating di/dt are required. BTB12-600BW3G, BTB12-800BW3G THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction-to-Case R 2.3 C/W JC Junction-to-Ambient R 60 JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current I / mA DRM (V = Rated V , V Gate Open) T = 25C I - - 0.005 D DRM RRM J RRM T = 125C - - 1.0 J ON CHARACTERISTICS Peak OnState Voltage (Note 2) V - - 1.55 V TM (I = 17 A Peak) TM Gate Trigger Current (Continuous dc) (V = 12 V, R = 30 ) I mA D L GT MT2(+), G(+) 2.5 - 50 MT2(+), G(-) 2.5 - 50 MT2(-), G(-) 2.5 - 50 Holding Current I - - 50 mA H (V = 12 V, Gate Open, Initiating Current = 100 mA) D Latching Current (V = 24 V, I = 60 mA) I mA D G L MT2(+), G(+) - - 70 MT2(+), G(-) - - 90 MT2(-), G(-) - - 70 Gate Trigger Voltage (V = 12 V, R = 30 ) V V D L GT MT2(+), G(+) 0.5 - 1.7 MT2(+), G(-) 0.5 - 1.1 MT2(-), G(-) 0.5 - 1.1 Gate Non-Trigger Voltage (T = 125C) V V J GD MT2(+), G(+) 0.2 - - MT2(+), G(-) 0.2 - - MT2(-), G(-) 0.2 - - DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (dI/dt) 4.0 - - A/ms c (Gate Open, T = 125C, No Snubber) J Critical Rate of Rise of On-State Current dI/dt - - 50 A/ s (T = 125C, f = 120 Hz, I = 2 x I , tr 100 ns) J G GT Critical Rate of Rise of OffState Voltage dV/dt 2000 - - V/ s (V = 0.66 x V , Exponential Waveform, Gate Open, T = 125C) D DRM J 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.