Schottky Barrier Rectifier DST5100S-A, 5A, 100V, TO-277B, Single RoHS Pb e3 DST5100S-A Description Littelfuse DST series Ultra Low V Schottky Barrier F Rectifier is designed to meet the general requirements of automotive applications by providing high temperature, low leakage and low V products. F It is suitable for high frequency switching mode power supply applications, as free-wheeling and polarity protection diodes. Features High reliability application Trench MOS Barrier and AEC-Q101 qualified Schottky technology Ultra lo w forward voltage Single die in TO-277B Features drop Package High frequency operation Pb-free E3 means 2nd level interconnect is MSL: L evel 1 - unlimited Pb-free and the terminal Anode High junction 1 finish material is tin(Sn) temperature capability K (IPC/ JEDEC J-STD- 609A.01) Cathode Anode 2 Applications S witching mode power Free-Wheeling diodes supply P olarity Protection Diodes DC/DC converters Maximum Ratings Parameters Symbol Test Conditions Max Unit Peak Inverse Voltage V - 100 V RWM Average Forward Current 50% duty cycle T =25C A I 5 A F(AV) (per device) * rectangular wave form Peak One Cycle Non-Repetitive Surge Current I 8.3 ms, half Sine pulse 120 A FSM (per leg) * Mounted on 30 mm x 30 mm pad areas aluminum PCB Electrical Characteristics Parameters Symbol Test Conditions Typ Max Unit V 5A, Pulse, T = 25 C 0.69 0.75 F1 J Forward Voltage Drop (per leg) * V V 5A, Pulse, T = 125 C 0.61 0.70 F2 J I V = rated V T = 25 C 0.06 0.12 R1 R R, J Reverse Current (per leg) * mA I V = rated V T = 125 C 2 18 R2 R R, J Junction Capacitance (per leg) C V = 5V, T = 25 C, f = 1MHz 245 - pF T R C SIG Voltage Rate of Change dv/dt - 10000 V/s * Pulse Width < 300s, Duty Cycle <2% 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/16/19 Schottky Barrier Rectifier DST5100S-A, 5A, 100V, TO-277B, Single Thermal-Mechanical Specifications Parameters Symbol Test Conditions Max Unit Junction Temperature T - -55 to +150 C J Storage Temperature T -55 to +150 C - stg Maximum Thermal Resistance R 75 C/W JA Junction to Ambient DC operation Maximum Thermal Resistance 4 C/W R JL* Junction to Lead Approximate Weight wt - 0.08 g Case Style TO-277B *Lead temperature monitored at the cathode pin Figure 1: Forward Current Derating Curve Figure 2: Forward Power Loss Characteristics 10 10 R = 4.0 C/W JL 8 8 6 6 4 4 2 2 0 0 25 50 75 100 125 150 0 2 4 6 8 10 o T , Lead Temperature ( C) L Average Forward Current (A) Figure 3: Typical Junction Capacitance Figure 4: Typical Reverse Characteristics 10.000 1000 T =125 J 1.000 T =25 J 0.100 100 0.010 T =25 J 10 0.001 5 10 15 20 25 30 35 40 20 30 40 50 60 70 80 90 100 Reverse Voltage (V) Percent of Rated Peak Reverse Voltage (%) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/16/19 Junction Capacitance (PF) Average Forward Current(A) Instantaneous Reverse Current (mA) Average Power Loss (W)