L401E3AP Littelfuse

E9 DO-15X DO-214 Surface Mount TO-92 Type 70 TO-202 Sidac RoHS (79 V to 330 V) E9 General Description The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon Applications application of a voltage exceeding the sidac breakover voltage point, the sidac switches on through a negative resistance region High-voltage lamp ignitors to a low on-state voltage. Conduction continues until the current Natural gas ignitors is interrupted or drops below the minimum holding current of the Gas oil ignitors device. High-voltage power supplies Teccors sidacs feature glass-passivated junctions to ensure a Xenon ignitors rugged and dependable device capable of withstanding harsh Overvoltage protector environments. Pulse generators Variations of devices covered in this data sheet are available for Fluorescent lighting ignitors custom design applications. Consult the factory for more informa- HID lighting ignitors tion. Features RoHS Compliant AC circuit oriented Glass-passivated junctions High surge current capability 2004 Littelfuse, Inc. E9 - 1 Sidac Data Sheets I V V I I I Part No. T(RMS) DRM BO DRM BO H (10) (6) (7) (8) (1) (2) (3) (4) Do not use tab Type Pin 1 Pin 3 Pin 2 Do not use TO-92 DO-15X DO-214 TO-202 Amps Volts Volts Amps Amps mAmps See Package Dimensions section for variations. (9) MAX MIN MIN MAX MAX MAX TYP MAX K0900E70 K0900G K0900S 1 70 79 97 5 10 60 150 K1050E70 K1050G K1050S 1 90 95 113 5 10 60 150 K1100E70 K1100G K1100S 1 90 104 118 5 10 60 150 K1200E70 K1200G K1200S 1 90 110 125 5 10 60 150 K1300E70 K1300G K1300S 1 90 120 138 5 10 60 150 K1400E70 K1400G K1400S 1 90 130 146 5 10 60 150 K1500E70 K1500G K1500S 1 90 140 170 5 10 60 150 K2000E70 K2000G K2000F1 K2000S 1 180 190 215 5 10 60 150 K2200E70 K2200G K2200F1 K2200S 1 180 205 230 5 10 60 150 K2400E70 K2400G K2400F1 K2400S 1 190 220 250 5 10 60 150 K2401F1 (11) 190 220 250 5 10 60 150 K2500E70 K2500G K2500F1 K2500S 1 200 240 280 5 10 60 150 K3000F1 1 200 270 330 5 10 60 150 (5) See Figure E9.1 for more than one full cycle rating. Specific Test Conditions (6) T 90 C for TO-92 Sidac C di/dt Critical rate-of-rise of on-state current T 105 C for TO-202 Sidacs C dv/dt Critical rate-of-rise of off-state voltage at rated V DRM T 100 C for DO-15X L T 100 C J T 90 C for DO-214 L dV /dt Critical rate-of-rise of turn-off voltage at 8 kHz q (7) See Figure E9.14 for clarification of sidac operation. I Breakover current 50/60 Hz sine wave BO (8) For best sidac operation, the load impedance should be near or I Repetitive peak off-state current 50/60 Hz sine wave V = V less than switching resistance. DRM DRM (9) See package outlines for lead form configurations. When ordering I Dynamic holding current 50/60 Hz sine wave R = 100 H special lead forming, add type number as suffix to part number. I On-state RMS current T 125 C 50/60 Hz sine wave T(RMS) J (10) Do not use electrically connected mounting tab or center lead. I Peak one-cycle surge current 50/60 Hz sine wave (non- TSM (11) The K2401F1 sidac is designed to ensure good commutation at repetitive) ()V V higher switching frequencies, as required in ignitor circuits for high BO S R Switching resistance R = -------------------------------- 50/60 Hz sine wave S intensity discharge (HID) lighting. A typical circuit for a metal halide S ()I I S BO lamp ignitor is shown in Figure E9.17. With proper component selection this circuit will produce three pulses for ignition of Osram V Breakover voltage 50/60 Hz sine wave BO lamp types such as HQI-T70W, HQI-T150W, and HQI-T250W which V Repetitive peak off-state voltage DRM require a minimum of three pulses at 4 kV magnitude and >1 s V Peak on-state voltage I = 1 A duration each at a minimum repetition rate of 3.3 kHz. TM T General Notes +I All measurements are made at 60 Hz with a resistive load at an I T ambient temperature of +25 C unless otherwise specified. I Storage temperature range (T ) is -65 C to +150 C. H R S S The case (T ) or lead (T ) temperature is measured as shown on C L I S the dimensional outline drawings in the Package Dimensions sec- I tion of this catalog. BO I DRM -V +V Junction temperature range (T ) is -40 C to +125 C. J Lead solder temperature is a maximum of +230 C for 10 s maxi- V BO V V T mum 1/16 (1.59 mm) from case. S (V - V ) BO S R = V S DRM (I - I ) S BO Electrical Specification Notes (1) See Figure E9.5 for V change versus junction temperature. BO (2) See Figure E9.6 for I versus junction temperature. BO -I (3) See Figure E9.2 for I versus case temperature. H V-I Characteristics (4) See Figure E9.13 for test circuit.