SiC Schottky Diode LFUSCD10065A, 650 V, 10 A, TO-220 2-lead RoHS Pb LFUSCD10065A Description The LFUSCD series of silicon carbide (SiC) Schottky di- odes has near-zero recovery current, high surge capability, and a maximum operating junction temperature of 175 C. The diode series is ideal for applications where improve- ments in efficiency, reliability, and thermal management are desired. Features Positive temperature Extremely fast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 175 C maximum switching losses operating junction compared to Si bipolar temperature diodes Enhanced surge capability Circuit Diagram Applications 1 Case Boost diodes in power Uninterruptible power factor correction supplies Switch-mode power Solar inverters supplies Industrial motor drives 12 1 2 Maximum Ratings Characteristics Symbol Conditions Max. Unit DC Blocking Voltage V - 650 V R Repetitive Peak Reverse Voltage, Tj 650 V V RRM = 25 C Surge Peak Reverse Voltage V 650 V RSM Maximum DC Forward Current 10 A I T = 147 C F C Non-Repetitive Forward Surge 75 A I T = 25 C, 8.3 ms, half sine pulse FSM C Current 455 A Non-Repetitive Peak Forward Current I T = 25 C, 10 S F,MAX C T = 25 C, L = 5 mH, I = 5.5A, j pk Non-Repetitive Avalanche Energy E 84 mJ AS V = 100 V DD T = 25 C 125 C Power Dissipation W P Tot T = 147 C 23 C Maximum Operating Junction 175 C T J,MAX Temperature Storage Temperature T -55 to 175 C STG 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/05/16SiC Schottky Diode LFUSCD10065A, 650 V, 10 A, TO-220 2-lead Electrical Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. - 1.5 1.7 I = 10 A, T = 25 C F J Forward Voltage - 1.8 2.1 V V I = 10 A, T = 150 C F F J I = 10 A, T = 175 C - 1.95 2.25 F J - 25 250 V = 650 V , T = 25 C R J Reverse Current A I R - 50 800 V = 650 V , T = 175 C R J Total Capacitive Charge - 16 - nC Q V = 400 V, I = 10 A, di/dt = 250 A/s C R F V = 1 V, f =1 MHz - 290 - R Total Capacitance - 31 - pF C V = 300 V, f = 1 MHz R - 28 - V = 600 V, f = 1 MHz R Footnote: T = +25 C unless otherwise specified J Thermal Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. Thermal Resistance - - 1.2 C/W R - JC Figure 1: Typical Reverse Characteristics Figure 2: Typical Foward Characteristics -4 1.E-0410 20 - 55 C -5 1.E-05 25 C 10 15 175 C -6 1.E-0610 10 -7 - 55 C 1.E-0710 25 C 100 C 5 -8 1.E-0810 150 C 175 C -9 10 0 1.E-09 0123 4 200250 300350 400450 500550 600650 Forward Voltage, V (V) Reverse Voltage, V (V) F R 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/05/16 Reverse Current, I (A) R Forward Current, I (A) F