SiC Schottky Diode LFUSCD20120B, 1200 V, 20 A, TO-247 3-lead RoHS Pb LFUSCD20120B Description The LFUSCD series of silicon carbide (SiC) Schottky di- odes has near-zero recovery current, high surge capability, and a maximum operating junction temperature of 175 C. The diode series is ideal for applications where improve- ments in efficiency, reliability, and thermal management are desired. Features Positive temperature Extremely fast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 175 C maximum switching losses operating junction compared to Si bipolar temperature diodes Enhanced surge capability Circuit Diagram Applications 4 Case Boost diodes in power Uninterruptible power 4 factor correction supplies Switch-mode power Solar inverters supplies Industrial motor drives 132 1 2 3 Maximum Ratings Characteristics Symbol Conditions Max. (Leg / Device) Unit DC Blocking Voltage V - 1200 V R Repetitive Peak Reverse Voltage, Tj 1200 V V RRM = 25 C Maximum DC Forward Current I T = 142C 10 / 20 A F C Non-Repetitive Forward Surge I T = 25 C, 8.3 ms, half sine pulse 80 / 160 A FSM C Current T = 25 C 136 / 272 C Power Dissipation W P Tot 30 / 60 T = 142 C C Maximum Operating Junction 175 C T J,MAX Temperature Storage Temperature T -55 to 175 C STG Soldering Temperatures, Wavesoldering Only Allowed at T 1.6 mm from case for 10s 260 C sold Leads 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/05/16SiC Schottky Diode LFUSCD20120B, 120 V, 20 A, TO-247 3-lead Electrical Characteristics Value (Leg / Device) Characteristics Symbol Conditions Unit Min. Typ. Max. - 1.5 1.7 I = 20 A, T = 25 C F J Forward Voltage V V F - 2.5 3 I = 20 A, T = 175 C F J - 30 / 60 250 / 500 V = 1200 V , T = 25 C R J Reverse Current I A R - 60 / 120 800 / 1600 V = 1200 V , T = 175 C R J Total Capacitive Charge - 35 / 70 - nC Q V = 600 V, I = 20 A, di/dt = 250 A/s C R F - 500 / 1000 - V = 1 V, f =1 MHz R Total Capacitance C V = 300 V, f = 1 MHz - 50 / 100 - pF R - 36 / 72 - V = 600 V, f = 1 MHz R Footnote: T = +25 C unless otherwise specified J Thermal Characteristics Value ( Leg / Device ) Characteristics Symbol Conditions Unit Min. Typ. Max. Thermal Resistance - - 1.1 / 0.55 C/W R - JC Figure 1: T ypical Reverse Characteristics Figure 2: Typical Foward Characteristics -4 1.E-0410 20 -5 1.E-05 10 15 -6 1.E-0610 10 -7 - 55 C 1.E-0710 25 C - 55 C 100 C 5 -8 25 C 1.E-0810 150 C 175 C 175 C -9 10 0 1.E-09 012345 500600 700800 900100011001200 Forward Voltage, V (V) Reverse Voltage, V (V) F R 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/05/16 Reverse Current, I (A) R Forward Current, I (A) F