GEN2 SiC Schottky Diode LSIC2SD065A08A, 650V, 8A, TO-220-2L RoHS Pb LSIC2SD065A08A 650 V, 8 A SiC Schottky Barrier Diode Description This series of silicon carbide (SiC) Schottky diodes has neg- ligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 C. These diodes series are ideal for applications where improve- ments in efficiency, reliability, and thermal management are desired. Features AEC-Q101 qualified Excellent surge capability P ositive temperature Extremely f ast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 1 75 C maximum switching losses *Image for reference only, for details refer to Dimensions-Package. operating junction compared to Si bipolar temperature diodes Circuit Diagram TO-220-2L Applications Case Boost diodes in PFC or Solar inverters DC/DC stages Case Industrial motor driv es S witch-mode power EV c harging stations supplies Uninterruptible power supplies Environmental 12 Lit telfuse RoHS logo = RoHS 12 RoHS conform Lit telfuse HF logo = Halogen Free Pb Lit telfuse Pb-free logo = Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage V - 650 V RRM DC Blocking Voltage V T = 25 C 650 V R J T = 25 C 23 C Continuous Forward Current I T = 135 C 10.7 A F C T = 150 C 8 C Non-Repetitive Forward Surge Current I T = 25 C, T = 10 ms, Half sine pulse 40 A FSM C P T = 25 C 88 C Power Dissipation P W Tot T = 110 C 38 C Operating Junction Temperature T - -55 to 175 C J Storage Temperature T - -55 to 150 C STG Soldering Temperature T - 260 C SOLD 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/16/20GEN2 SiC Schottky Diode LSIC2SD065A08A, 650V, 8A, TO-220-2L Electrical Characteristics (T =25 C unless otherwise specified) J Value Characteristics Symbol Conditions Unit Min. Typ. Max. I = 8 A, T = 25 C - 1.5 1.8 F J Forward Voltage V V F I = 8 A, T = 175 C - 1.85 - F J V = 650 V , T = 25 C - <1 50 R J Reverse Current I A R V = 650 V , T = 175 C - 15 - R J V = 1 V, f = 1 MHz - 415 - R Total Capacitance C V = 200 V, f = 1 MHz - 56 - pF R V = 400 V, f = 1 MHz - 41 - R V R Total Capacitive Charge Q V = 400 V, Q = C(V)dV - 29 - nC C R c 0 Thermal Characteristics Characteristics Symbol Value Unit Thermal Resistance R 1.7 C/W JC Figure 1: T ypical Foward Characteristics Figure 2: Typical Reverse Characteristics 8 T = 25 C J 7 T = 150 C J 6 T = 125 C J T = 175 C J 5 4 3 T = -55 C J 2 1 0 00.250.5 0.75 11.251.5 1.75 2 Voltage (V) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/16/20 Current (A)