GEN2 SiC Schottky Diode LSIC2SD065A10A, 650V, 10A, TO-220-2L RoHS Pb LSIC2SD065A10A 650 V, 10 A SiC Schottky Barrier Diode Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features AEC-Q101 qualified Ex cellent surge capability P ositive temperature Extremely fast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 1 75 C maximum switching losses *Image for reference only, for details refer to Dimensions-Package. operating junction compared to Si bipolar temperature diodes Circuit Diagram TO-220-2L Applications Boost diodes in PFC or Solar in verters Case DC/DC stages Industrial motor driv es Case S witch-mode power EV c harging stations supplies Uninter ruptible power supplies Environmental 12 Littelfuse RoHS logo = RoHS 12 RoHS conform Lit telfuse HF logo = Halogen Free Pb Lit telfuse Pb-free logo = Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage V - 650 V RRM DC Blocking Voltage V T = 25 C 650 V R J T = 25 C 27 C Continuous Forward Current I T = 135 C 12.5 A F C T = 147 C 10 C Non-Repetitive Forward Surge Current I T = 25 C, T = 10 ms, Half sine pulse 48 A FSM C P T = 25 C 100 C Power Dissipation P W Tot T = 110 C 43 C Operating Junction Temperature T - -55 to 175 C J Storage Temperature T - -55 to 150 C STG Soldering Temperature T - 260 C SOLD 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/16/20GEN2 SiC Schottky Diode LSIC2SD065A10A, 650V, 10A, TO-220-2L Electrical Characteristics (T =25 C unless otherwise specified) J Value Characteristics Symbol Conditions Unit Min. Typ. Max. I = 10 A, T = 25 C - 1.5 1.8 F J Forward Voltage V V F I = 10 A, T = 175 C - 1.85 - F J V = 650 V , T = 25 C - <1 50 R J Reverse Current I A R V = 650 V , T = 175 C - 25 - R J V = 1 V, f = 1 MHz - 470 - R Total Capacitance C V = 200 V, f = 1 MHz - 60 - pF R V = 400 V, f = 1 MHz - 43 - R V R Total Capacitive Charge Q V = 400 V, Q = C(V)dV - 30 - nC C R c 0 Thermal Characteristics Characteristics Symbol Value Unit Thermal Resistance 1.5 C/W R JC Figure 1: T ypical Foward Characteristics Figure 2: T ypical Reverse Characteristics 10 T = 25 C 9 J 8 T = 150 C J 7 T = 125 C J T = 175 C 6 J 5 4 3 2 T = -55 C J 1 0 00.250.5 0.75 11.251.5 1.75 2 Voltage (V) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/16/20 Current (A)