GEN2 SiC Schottky Diode LSIC2SD065A20A, 650V, 20A, TO-220-2L RoHS Pb LSIC2SD065A20A 650 V, 20 A SiC Schottky Barrier Diode Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features AEC-Q101 qualified Ex cellent surge capability P ositive temperature Extremely fast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced *Image for reference only, for details refer to Dimensions-Package. 1 75 C maximum switching losses operating junction compared to Si bipolar temperature diodes Circuit Diagram TO-220-2L Applications Case Boost diodes in PFC or Solar in verters Case DC/DC stages Industrial motor drives Switch-mode power EV c harging stations supplies Uninter ruptible power supplies Environmental 12 12 Littelfuse RoHS logo = RoHS RoHS conform Lit telfuse HF logo = Halogen Free Pb Littelfuse Pb-free logo= Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage V - 650 V RRM DC Blocking Voltage V T = 25 C 650 V R J T = 25 C 45 C Continuous Forward Current I A F T = 135 C 20 C Non-Repetitive Forward Surge Current I T = 25 C, T = 10 ms, Half sine pulse 90 A FSM C P T = 25 C 135 C Power Dissipation P W Tot T = 110 C 60 C Operating Junction Temperature T - -55 to 175 C J Storage Temperature T - -55 to 150 C STG Soldering Temperature T - 260 C SOLD 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/16/20GEN2 SiC Schottky Diode LSIC2SD065A20A, 650V, 20A, TO-220-2L Electrical Characteristics (T =25 C unless otherwise specified) J Value Characteristics Symbol Conditions Unit Min. Typ. Max. I = 20 A, T = 25 C - 1.5 1.8 F J Forward Voltage V V F I = 20 A, T = 175 C - 1.85 - F J V = 650 V , T = 25 C - <1 50 R J Reverse Current I A R V = 650 V , T = 175 C - 60 - R J V = 1 V, f = 1 MHz - 960 - R Total Capacitance C V = 200 V, f = 1 MHz - 120 - pF R V = 400 V, f = 1 MHz - 86 - R V V R R Total Capacitive Charge Q V = 400 V, Q = C(V)dV - 63 - nC C R c C(V)dV Qc = 0 0 Thermal Characteristics Characteristics Symbol Value Unit Thermal Resistance R 1.1 C/W JC Figure 1: T ypical Foward Characteristics Figure 2: T ypical Reverse Characteristics 20 18 T = 25 C J 16 T = 125 C T = 150 C J J 14 12 T = 175 C J 10 8 T = -55 C J 6 4 2 0 00.250.5 0.75 11.251.5 1.75 2 Voltage (V) Figure 4: Cur rent Derating Figure 3: P ower Derating 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/16/20 Current (A)