GEN2 SiC Schottky Diode LSIC2SD065C06A, 650 V, 6 A, TO-252-2L (DPAK) RoHS Pb LSIC2SD065C06A 650 V, 6 A SiC Schottky Barrier Diode Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and SiC Schottky Diode a maximum operating junction temperature of 175 C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features AEC-Q101 qualified Excellent surge capability Positive temperature Extremely f ast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 175 C maximum switching losses operating junction compared to Si bipolar temperature diodes Circuit Diagram TO-252-2L (DPAK) Applications Boost diodes in PFC or Solar in verters DC/DC stages Case Case Industrial motor driv es Switch-mode power EV charging stations supplies Uninter ruptible power supplies Environmental RoHS Littelfuse RoHS logo = 1 2 1 2 RoHS conform Lit telfuse HF logo = Halogen Free Pb Littelfuse Pb-free logo = Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage 650 V V - RRM DC Blocking Voltage 650 V V T = 25 C R J T = 25 C 18.5 C Continuous Forward Current 8.6 A I T = 135 C F C T = 152 C 6 C Non-Repetitive Forward Surge Current 32 A I T = 25 C, T = 10 ms, Half sine pulse FSM C P 75 T = 25 C C Power Dissipation P W Tot T = 110 C 32 C Operating Junction Temperature T - -55 to +175 C J Storage Temperature T - -55 to +150 C STG Soldering Temperature (reflow MSL 1) T - 260 C SOLD 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/07/19GEN2 SiC Schottky Diode LSIC2SD065C06A, 650 V, 6 A, TO-252-2L (DPAK) Electrical Characteristics Value Characteristics Symbol Conditions Unit SiC Schottky Diode Min. Typ. Max. - 1.5 1.8 I = 6 A, T = 25 C F J Forward Voltage V V F - 1.85 - I = 6 A, T = 175 C F J - <1 50 V = 650 V , T = 25 C R J Reverse Current A I R - 15 - V = 650 V , T = 175 C R J - 300 - V = 1 V, f = 1 MHz R Capacitance - 39 - pF C V = 200 V, f = 1 MHz R V = 400 V, f = 1 MHz - 28 - R V R Total Capacitive Charge Q V = 400 V, - 20 - nC C(V)dV Qc = C R 0 Thermal Characteristics Characteristics Symbol Value Unit Thermal Resistance 2.0 C/W R JC Figure 1: Typical Foward Characteristics Figure 2: Typical Reverse Characteristics 6 T = 25 C J 5 T = 150 C J T = 125 C J 4 T = 175 C J 3 2 T = -55 C 1 J 0 00.250.5 0.75 11.251.5 1.75 2 Voltage (V) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/07/19 Current (A)